Practical and reproducible mapping of strains in Si devices using geometric phase analysis of annular dark-field images from scanning transmission electron microscopy

IEEE Electron Device Letters

Volumn 31, Issue 8, 2010, Pages 854-856

  Chung, Jayhoon ^a   Lian, Guoda ^a   Rabenberg, Lew ^b  

^a TEXAS INSTRUMENTS   (United States)

^b UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

Geometric phase analysis (GPA); high angle annular dark field scanning transmission electron microscopy (HAADF STEM); high resolution transmission electron microscopy (HRTEM); local strain measurement; strained Si

Indexed keywords

GEOMETRIC PHASE ANALYSIS; HAADF-STEM; HIGH-ANGLE ANNULAR DARK FIELDS; SCANNING TRANSMISSION ELECTRON MICROSCOPY; STRAINED SI;

ELECTRIC FIELD MEASUREMENT; ELECTRONS; FAILURE ANALYSIS; GEOMETRY; QUALITY ASSURANCE; SCANNING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON; STRAIN; STRAIN GAGES; STRAIN MEASUREMENT;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 77955171418     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2049562     Document Type: Article

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