Interconnect design for subthreshold circuits

IEEE Transactions on Nanotechnology

Volumn 11, Issue 3, 2012, Pages 633-639

  Pable, Sachin D ^a,b   Hasan, Mohd ^a  

^a ALIGARH MUSLIM UNIVERSITY   (India)

^b Padmashri Dr Vithalrao Vikhe Patil College of Engineering   (India)

Author keywords

Aspect ratio scaling; interconnect; mixed carbon nanotube (CNT) bundle; single wall carbon nanotube (SWCNT); subthreshold

Indexed keywords

BIAS POINTS; CU INTERCONNECT; GLOBAL INTERCONNECTS; INTERCONNECT; INTERCONNECT DESIGN; INTERCONNECT RESISTANCE; MIXED CARBON NANOTUBE (CNT) BUNDLE; PERFORMANCE ANALYSIS; PORTABLE APPLICATIONS; PORTABLE SYSTEM; RAPID GROWTH; SUBTHRESHOLD; SUBTHRESHOLD CIRCUITS; SUBTHRESHOLD CONDITION; SUBTHRESHOLD REGION; ULTRA-LOW POWER;

ASPECT RATIO; SINGLE-WALLED CARBON NANOTUBES (SWCN);

CARBON NANOTUBES;

EID: 84860865909     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2012.2189015     Document Type: Article

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