Modeling of metallic carbon-nanotube interconnects for circuit simulations and a comparison with Cu interconnects for scaled technologies

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

Volumn 25, Issue 1, 2006, Pages 58-65

  Raychowdhury, A ^a   Roy, K ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

Channel material; Circuit simulations; Copper interconnects; Current density; Field effect transistors; Metallic carbon nanotube interconnects; Radio frequency applications; Semiconducting carbon nanotubes; Single walled carbon nanotubes

Indexed keywords

COMPUTER SIMULATION; CURRENT DENSITY; FIELD EFFECT TRANSISTORS; MATHEMATICAL MODELS; SILICON; VLSI CIRCUITS;

CHANNEL MATERIALS; CIRCUIT SIMULATIONS; COPPER INTERCONNECTS; METALLIC CARBON-NANOTUBE INTERCONNECTS; RADIO-FREQUENCY APPLICATIONS; SEMICONDUCTING CARBON NANOTUBES; SINGLE-WALLED CARBON NANOTUBES;

CARBON NANOTUBES;

EID: 31344449874     PISSN: 02780070     EISSN: None     Source Type: Journal    
DOI: 10.1109/TCAD.2005.853702     Document Type: Article

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