Microthermal stage for electrothermal characterization of phase-change memory

IEEE Electron Device Letters

Volumn 32, Issue 7, 2011, Pages 952-954

  Lee, Jaeho ^a   Kim, Sangbum ^a,b   Jeyasingh, Rakesh ^a   Asheghi, Mehdi ^a   Wong, H S Philip ^a   Goodson, Kenneth E ^a  

^a Stanford University   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Ge2Sb2Te5 (GST); microthermal stage (MTS); phase change memory (PCM); thermal conductivity

Indexed keywords

ABRUPT CHANGE; ELECTRICAL CHARACTERIZATION; ELECTRICAL RESISTANCES; ELECTROTHERMAL CHARACTERIZATION; MICROTHERMAL STAGE (MTS); PHASE CHANGES; RAPID TEMPERATURE; TEMPORAL RESOLUTION; THERMAL CONDUCTIVITY MEASUREMENTS;

ELECTRIC PROPERTIES; GERMANIUM; PHASE INTERFACES; POWER QUALITY; RECRYSTALLIZATION (METALLURGY); THERMAL CONDUCTIVITY;

PHASE CHANGE MEMORY;

EID: 79959780482     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2144952     Document Type: Article

References (12)

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