Integrating phase-change memory cell with Ge nanowire diode for crosspoint memory - Experimental demonstration and analysis

IEEE Transactions on Electron Devices

Volumn 55, Issue 9, 2008, Pages 2307-2313

  Kim, SangBum ^a   Zhang, Yuan ^a   McVittie, James P ^a   Jagannathan, Hemanth ^a,b   Nishi, Yoshio ^a   Wong, H S Philip ^a  

^a Stanford University   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Crosspoint memory; Nanowire diode; Ovonic unified memory (OUM); Phase change memory (PCM); Phase change random access memory (PRAM); Vapor liquid solid (VLS) technique

Indexed keywords

CELLS; CYTOLOGY; DISTILLATION; ELECTRIC WIRE; GERMANIUM; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR STORAGE; SILICON;

CROSSPOINT MEMORY; NANOWIRE DIODE; OVONIC UNIFIED MEMORY (OUM); PHASE-CHANGE MEMORY (PCM); PHASE-CHANGE RANDOM-ACCESS MEMORY (PRAM); VAPOR-LIQUID-SOLID (VLS) TECHNIQUE;

PHASE CHANGE MEMORY;

EID: 50549095946     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.927631     Document Type: Article

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