Electrical behavior of phase-change memory cells based on GeTe

IEEE Electron Device Letters

Volumn 31, Issue 5, 2010, Pages 488-490

  Perniola, Luca ^a   Sousa, Veronique ^a   Fantini, Andrea ^a   Arbaoui, Edrisse ^b   Bastard, Audrey ^b   Armand, Marilyn ^a   Fargeix, Alain ^a   Jahan, Carine ^a   Nodin, Jean François ^a   Persico, Alain ^a   Blachier, Denis ^a   Toffoli, Alain ^a   Loubriat, Sebastien ^a   Gourvest, Emanuel ^b   Betti Beneventi, Giovanni ^a   Feldis, Helene ^a   Maitrejean, Sylvain ^a   Lhostis, Sandrine ^b   Roule, Anne ^a   Cueto, Olga ^a   Reimbold, Gilles ^a   Poupinet, Ludovic ^a   Billon, Thierry ^a   De Salvo, Barbara ^a   Bensahel, Daniel ^b   Mazoyer, Pascale ^b   Annunziata, Roberto ^b   Zuliani, Paola ^b   Boulanger, Fabien ^a   more..

^a CEA LETI   (France)

^b STMICROELECTRONICS   (France)

Author keywords

Chalcogenide; Germanium; GeTe; Nonvolatile memories; Phase change (PC) memories (PCMs); Telluride

Indexed keywords

ACTIVE MATERIAL; ALTERNATIVE MATERIALS; ELECTRICAL BEHAVIORS; ENERGY-PER-BIT; HIGH TEMPERATURE; NON-VOLATILE MEMORIES; PHASE CHANGES; RAPID SET; RETENTION BEHAVIOR; SINGLE CELLS; STRESS TIME;

GERMANIUM; SINGLE ELECTRON TRANSISTORS; TRANSIENTS;

PHASE CHANGE MEMORY;

EID: 77951877290     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2044136     Document Type: Article

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