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Volumn 44, Issue 10, 2005, Pages 7340-7344

Electronic properties of amorphous and crystalline Ge2Sb 2Te5 films

Author keywords

DVD; Electrical conductivity; Ge2Sb2Te5; Optical band gap; Phase change; Thermopower

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS MATERIALS; CRYSTALLIZATION; ELECTRONIC PROPERTIES; GERMANIUM COMPOUNDS; PHASE TRANSITIONS; VIDEODISKS;

EID: 31544440445     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.7340     Document Type: Article
Times cited : (226)

References (37)
  • 25
    • 31544481132 scopus 로고    scopus 로고
    • note
    • For instance, 1kV films gave a rougher surface, a smaller optical gap energy, and a lower conductivity activation-energy, and a more gradual crystallization upon heating. Surface roughness increased with sputtering rate, which changed with gas pressure.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.