Thermal boundary resistance measurements for phase-change memory devices

IEEE Electron Device Letters

Volumn 31, Issue 1, 2010, Pages 56-58

  Reifenberg, John P ^a   Chang, Kuo Wei ^b   Panzer, Matthew A ^a   Kim, Sangbum ^a   Rowlette, Jeremy A ^a   Asheghi, Mehdi ^a   Wong, H S Philip ^a   Goodson, Kenneth E ^a  

^a Stanford University   (United States)

^b INTEL CORPORATION   (United States)

Author keywords

Nonvolatile memories; Phase change memory (PCM); Thermal boundary resistance (TBR)

Indexed keywords

NON-VOLATILE MEMORIES; PICOSECOND THERMOREFLECTANCE; THERMAL BOUNDARY RESISTANCE; THERMAL CONDUCTIVITY MEASUREMENTS; THERMAL INTERFACES; THERMAL RESISTANCE;

BREEDER REACTORS; PHASE INTERFACES; PULSE CODE MODULATION; SYSTEM THEORY; TITANIUM NITRIDE;

PHASE CHANGE MEMORY;

EID: 72949098808     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2035139     Document Type: Article

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