Microstructures and thermoelectric properties of GeSbTe based layered compounds

Applied Physics A: Materials Science and Processing

Volumn 88, Issue 2, 2007, Pages 425-428

  Yan, F ^a   Zhu, T J ^a   Zhao, X B ^a   Dong, S R ^b  

^a ZHEJIANG UNIVERSITY   (China)

^b ZHEJIANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; GRAIN BOUNDARIES; MICROSTRUCTURE; QUENCHING; SEMICONDUCTING GERMANIUM COMPOUNDS; THERMOELECTRICITY;

CHALCOGENIDE SEMICONDUCTORS; HEXAGONAL STRUCTURES; POWER FACTORS; THERMOELECTRIC APPLICATIONS;

MULTILAYERS;

EID: 34250649395     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-007-4006-9     Document Type: Article

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