Lattice temperature model and temperature effects in oxide-confined VCSEL's

Journal of Computational Electronics

Volumn 3, Issue 2, 2004, Pages 103-116

  Ng, Wei Choon ^a,b   Liu, Yang ^a,c   Hess, Karl ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^b SYNOPSYS INC   (United States)

^c STANFORD UNIVERSITY   (United States)

Author keywords

Temperature equation; Thermal lensing; Thermal rollover; VCSEL simulation

Indexed keywords

BAND STRUCTURE; COMPUTER SIMULATION; CONTINUOUS WAVE LASERS; CRYSTAL LATTICES; ELECTRON TRANSPORT PROPERTIES; FERMI LEVEL; HETEROJUNCTIONS; MONTE CARLO METHODS; TEMPERATURE; THERMAL EFFECTS;

LATTICE TEMPERATURE MODEL; PELTIER HEAT; SEPARATE CONFINEMENT HETEROSTRUCTURE; TEMPERATURE EQUATION; THERMAL LENSING; THERMAL ROLLOVER; VERTICAL CAVITY SURFACE EMITTING LASERS (VCSELS);

SEMICONDUCTOR LASERS;

EID: 20544447516     PISSN: 15698025     EISSN: 15728137     Source Type: Journal    
DOI: 10.1007/s10825-004-0315-9     Document Type: Article

References (29)

1. W. Nakwaski and M. Osinski, "Thermal properties of etched-well surface-emitting semiconductor lasers," IEEE J. Quantum Electron., 27 (6), 1391 (1991).
2. W. Nakwaski and M. Osinski, "Thermal properties of vertical cavity surface emitting semiconductor laser diodes," Prog. Opt., 38, 165 (1998).
3. R. Michalzik and K.J. Ebeling, "Modeling and design of proton-implanted ultralow-threshold vertical-cavity laser diodes," IEEE J. Quantum Electron., 29 (6), 1963 (1993).
4. R.P. Sarzala, W. Nakwaski, and M. Osinski, "Comprehensive thermal-electrical self-consistent model of proton-implanted top-surface-emitting lasers," Int. J. Optoelectron., 10 (5), 357 (1995).
5. P.M. Norris, G. Chen, and C.L. Tien, "Size effects on the temperature rise in vertical-cavity surface-emitting laser diodes," Int. J. Heat Mass Transfer, 17 (1), 9 (1994).
6. J. Piprek, P. Abraham, and J. E. Bowers, "Self-consistent analysis of high-temperature effects on strained-layer multiquantum-well InGaAsP-InP lasers", IEEE J. Quantum Electron., 36 (3), 366 (2000).
7. D.W. Winston and R.E. Hayes, "Optoelectronic device simulation of Bragg reflectors and their influence on surface-emitting laser characteristics," IEEE J. Quantum Electron., 34 (4), 707 (1998).
8. G.K. Wachutka, "Rigorous thermodynamic treatment of heat generation and conduction in semiconductor device modeling," IEEE Trans. CAD, 9 (11), 1141 (1990).
9. S.L. Chuang 1995 Physics of Optoelectronic Devices Wiley New York
10. L.A. Coldren and S.W. Corzine 1995 Diode Lasers and Photonic Integrated Circuits Wiley-Interscience New York
11. J.W. Scott, R.S. Geels, S.W. Corzine, and L.A. Coldren, "Modeling temperature effects and spatial hole burning to optimize vertical-cavity surface-emitting laser performance," IEEE J. Quantum Electron., 29 (3), 1295 (1993).
12. J. Piprek, J.K. White, and A.J. Springthorpe, "What limits the maximum output power of long-wavelength AlGaInAs/InP laser diodes?" IEEE J. Quantum Electron., 38 (9), 1253 (2002).
13. A. Anselm 1981 Introduction to Semiconductor Theory MIR Publishers Moscow
14. K. Hess 2000 Advanced Theory of Semiconductor Devices IEEE Press New York
15. W.-C. Ng, "Thermal and optical simulations of vertical cavity surface emitting lasers," Ph.D. dissertation, University of Illinois at Urbana-Champaign, Nov. 2002.
16. M. Grupen and K. Hess, "Simulation of carrier transport and nonlinearities in quantum-well laser diodes," IEEE J. Quantum Electron., 34 (1), 120 (1998).
17. F.A. Oyafuso, "Fully coupled electrical and optical simulation of vertical cavity surface emitting lasers," Ph.D. dissertation, University of Illinois at Urbana-Champaign, 2001.
18. Y. Liu, W.-C. Ng, F. Oyafuso, B. Klein, and K. Hess, "Simulating the modulation response of VCSELs: The effects of diffusion capacitance and spatial hole-burning," IEE Proceedings-Optoelectronics, 149, 182 (2002).
19. K.L. Lear, A. Mar, K.D. Choquette, S.P. Kilcoyne, R.P. Schneider Jr., and K.M. Geib,"High-frequency modulation of oxide-confined vertical cavity surface emitting lasers," Electron. Lett., 32 (5), 457 (1996).
20. J. Piprek, T. Troger, B. Schroter, J. Kolodzey, and C.S. Ih, "Thermal conductivity reduction in GaAs-AlAs distributed bragg reflectors," IEEE Photonics Technol. Lett., 10 (1), 81 (1998).
21. W.-C. Ng, Y. Liu, B. Klein, and K. Hess, "Improved effective index method for oxide-confined VCSEL mode analysis," in Proc. SPIE: Phys. Simulation of Optoelectron. Devices X (2002) vol. 4646, p.168.
22. D.L. Scharfetter and H.K. Gummel, "Large-signal analysis of a silicon read diode oscillator," IEEE Trans. Electron Devices, ED-16, 64 (1969).
23. P.T. Landsberg 1991 Recombination in Semiconductors Cambridge University Press New York
24. R. Quay, "Analysis and simulation of high electron mobility transistors," Ph.D. Dissertation, Technischen Universität Wien (Technical University of Vienna), Vienna, Austria, July 2001.
25. R.I. Taylor, R.A. Abram, M.G. Burt, and C. Smith, "Auger recombination in a quantum-well-heterostructure laser," IEE Proc., Pt. J, 132 (6), 364 (1985).
26. S. Hausser, G. Fuchs, A. Hangleiter, and K. Streubel, "Auger recombination in bulk and quantum well in InGaAs," Appl. Phys. Lett., 56 (10), 913 (1990).
27. A.S. Polkovnikov and G.G. Zegrya, "Auger recombination in semiconductor quantum wells," Phy. Rev. B, 58 (7) 4039 (1998).
28. C.H. Henry, R.A. Logan, F.R. Merritt, and J.P. Luongo, "The effect of intervalence band absorption on the thermal behavior of InGaAsP lasers," IEEE J. Quantum Electron., 19 (6), 947 (1983).
29. M. Asada and Y. Suematsu, "The effects of loss and nonradiative recombination on the temperature dependence of threshold current in 1.5-1.6 μm GaInAsP/InP lasers," IEEE J. Quantum Electron., 19 (6), 917 (1983).