Hall mobility of amorphous Ge2Sb2Te5

Solid State Communications

Volumn 139, Issue 4, 2006, Pages 161-164

  Baily, S A ^a   Emin, David ^b   Li, Heng ^c  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b UNIVERSITY OF NEW MEXICO   (United States)

^c UNIVERSITY OF UTAH   (United States)

Author keywords

A. Disordered systems; B. Galvanomagnetic effects

Indexed keywords

ELECTRIC CONDUCTIVITY; GALVANOMAGNETIC EFFECTS; HALL EFFECT; SEEBECK EFFECT; SEMICONDUCTING GERMANIUM; THICK FILMS;

DISORDERED SYSTEMS; MULTI-BAND TRANSPORT; P-TYPE SEMICONDUCTORS; ROOM TEMPERATURE;

AMORPHOUS FILMS;

EID: 33746160304     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2006.05.031     Document Type: Article

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