Temperature model for Ge2Sb2Te5 phase change memory in electrical memory device

Solid-State Electronics

Volumn 56, Issue 1, 2011, Pages 13-17

  Cai, Daolin ^a   Song, Zhitang ^a   Chen, Houpeng ^a   Chen, Xiaogang ^a  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

GST; PCM; Temperature

Indexed keywords

A-THERMAL; ACTIVE REGIONS; CRYSTALLINE FRACTIONS; ELECTRICAL CHARACTERISTIC; GST; MEMORY DEVICE; PCM; PHYSICAL MODEL; RESET VOLTAGE; SIMULATION RESULT; TEMPERATURE MODELS; VOLTAGE CURRENT CURVE;

CRYSTALLINE MATERIALS; ELECTRIC POTENTIAL; GERMANIUM; TELLURIUM COMPOUNDS;

PHASE CHANGE MEMORY;

EID: 78751645710     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2010.12.001     Document Type: Article

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