SCOPUS 정보 검색 플랫폼

Applied Physics Letters

Volumn 98, Issue 10, 2011, Pages

Evolution of RESET current and filament morphology in low-power HfO 2 unipolar resistive switching memory

(6) Hou, Tuo Hung a Lin, Kuan Liang a Shieh, Jiann b Lin, Jun Hung c Chou, Cheng Tung c Lee, Yao Jen d

a NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

b NATIONAL UNITED UNIVERSITY (Taiwan)

c NATIONAL CENTRAL UNIVERSITY (Taiwan)

d NATIONAL NANO DEVICE LABORATORIES (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DISSIPATION CURRENT; FILAMENT MORPHOLOGY; HIGH-DENSITY; LOW POWER; LOW RESET CURRENTS; NANO SCALE; ORDERS OF MAGNITUDE; QUANTITATIVE MODELS; RESET CURRENTS; RESISTIVE SWITCHING MEMORIES; SEMICONDUCTIVE; SET VOLTAGE;

HAFNIUM COMPOUNDS;

MORPHOLOGY;

EID: 79952661161 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3565239 Document Type: Article

Times cited : (45)

References (13)

1
- 50249152925
- 0163-1918
- M. -J. Lee, Y. Park, B. -S. Kang, S. -E. Ahn, C. B. Lee, K. Kim, W. Xianyu, G. Stefanovich, J. -H. Lee, S. -J. Chung, Y. -H. Jim, C. -S. Lee, J. -B. Park, I. -G. Baek, and I. -K. Yoo, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 2007, 771.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2007 , pp. 771
- Lee, M.-J.¹ Park, Y.² Kang, B.-S.³ Ahn, S.-E.⁴ Lee, C.B.⁵ Kim, K.⁶ Xianyu, W.⁷ Stefanovich, G.⁸ Lee, J.-H.⁹ Chung, S.-J.¹⁰ Jim, Y.-H.¹¹ Lee, C.-S.¹² Park, J.-B.¹³ Baek, I.-G.¹⁴ Yoo, I.-K.¹⁵

2
- 54949089222
- 0935-9648, 10.1002/adma.200702081
- S. -E. Ahn, M. -J. Lee, Y. Park, B. S. Kang, C. B. Lee, K. H. Kim, S. Seo, D. -S. Suh, D. -C. Kim, J. Hur, W. Xianyu, G. Stefanovich, H. Yin, I. -K. Yoo, J. -H. Lee, J. -B. Park, I. -G. Baek, and B. H. Park, Adv. Mater. 0935-9648 20, 924 (2008). 10.1002/adma.200702081
- (2008) Adv. Mater. , vol.20 , pp. 924
- Ahn, S.-E.¹ Lee, M.-J.² Park, Y.³ Kang, B.S.⁴ Lee, C.B.⁵ Kim, K.H.⁶ Seo, S.⁷ Suh, D.-S.⁸ Kim, D.-C.⁹ Hur, J.¹⁰ Xianyu, W.¹¹ Stefanovich, G.¹² Yin, H.¹³ Yoo, I.-K.¹⁴ Lee, J.-H.¹⁵ Park, J.-B.¹⁶ Baek, I.-G.¹⁷ Park, B.H.¹⁸

3
- 67650102619
- 0935-9648, 10.1002/adma.200900375
- R. Waser, R. Dittmann, G. Staikov, and K. Szot, Adv. Mater. 0935-9648 21, 2632 (2009). 10.1002/adma.200900375
- (2009) Adv. Mater. , vol.21 , pp. 2632
- Waser, R.¹ Dittmann, R.² Staikov, G.³ Szot, K.⁴

4
- 76649133422
- 1748-3387, 10.1038/nnano.2009.456
- D. -H. Kwon, K. M. Kim, J. H. Jang, J. M. Jeon, M. H. Lee, G. H. Kim, X. -S. Li, G. -S. Park, B. Lee, S. Han, M. Kim, and C. S. Hwang, Nat. Nanotechnol. 1748-3387 5, 148 (2010). 10.1038/nnano.2009.456
- (2010) Nat. Nanotechnol. , vol.5 , pp. 148
- Kwon, D.-H.¹ Kim, K.M.² Jang, J.H.³ Jeon, J.M.⁴ Lee, M.H.⁵ Kim, G.H.⁶ Li, X.-S.⁷ Park, G.-S.⁸ Lee, B.⁹ Han, S.¹⁰ Kim, M.¹¹ Hwang, C.S.¹²

5
- 57049104587
- 0003-6951, 10.1063/1.3036532
- S. B. Lee, S. C. Chae, S. H. Chang, J. S. Lee, S. Seo, B. Kahng, and T. W. Noh, Appl. Phys. Lett. 0003-6951 93, 212105 (2008). 10.1063/1.3036532
- (2008) Appl. Phys. Lett. , vol.93 , pp. 212105
- Lee, S.B.¹ Chae, S.C.² Chang, S.H.³ Lee, J.S.⁴ Seo, S.⁵ Kahng, B.⁶ Noh, T.W.⁷

6
- 63549132928
- 0003-6951, 10.1063/1.3108088
- K. M. Kim and C. S. Hwang, Appl. Phys. Lett. 0003-6951 94, 122109 (2009). 10.1063/1.3108088
- (2009) Appl. Phys. Lett. , vol.94 , pp. 122109
- Kim, K.M.¹ Hwang, C.S.²

7
- 79952685773
- 2 /Si devices.

8
- 34548263330
- Electromigration effect of Ni electrodes on the resistive switching characteristics of NiO thin films
- DOI 10.1063/1.2769759
- C. B. Lee, B. S. Kang, M. J. Lee, S. E. Ahn, G. Stefanovich, W. X. Xianyu, K. H. Kim, J. H. Hur, H. X. Yin, Y. Park, I. K. Yoo, J. -B. Park, and B. H. Park, Appl. Phys. Lett. 0003-6951 91, 082104 (2007). 10.1063/1.2769759 (Pubitemid 47318956)
- (2007) Applied Physics Letters , vol.91 , Issue.8 , pp. 082104
- Lee, C.B.¹ Kang, B.S.² Lee, M.J.³ Ahn, S.E.⁴ Stefanovich, G.⁵ Xianyu, W.X.⁶ Kim, K.H.⁷ Hur, J.H.⁸ Yin, H.X.⁹ Park, Y.¹⁰ Yoo, I.K.¹¹ Park, J.-B.¹² Park, B.H.¹³

9
- 79955708416
- 2 resistive-switching memory
- 2 resistive-switching memory.," J. Appl. Phys. (unpublished).
- J. Appl. Phys
- Lin, K.-L.¹ Hou, T.-H.² Shieh, J.³ Lin, J.-H.⁴ Chou, C.-T.⁵ Lee, Y.-J.⁶

10
- 48249129194
- 0003-6951, 10.1063/1.2959065
- K. Kinoshita, K. Tsunoda, Y. Sato, H. Noshiro, S. Yagaki, M. Aoki, and Y. Sugiyama, Appl. Phys. Lett. 0003-6951 93, 033506 (2008). 10.1063/1.2959065
- (2008) Appl. Phys. Lett. , vol.93 , pp. 033506
- Kinoshita, K.¹ Tsunoda, K.² Sato, Y.³ Noshiro, H.⁴ Yagaki, S.⁵ Aoki, M.⁶ Sugiyama, Y.⁷

11
- 77949743331
- 0003-6951, 10.1063/1.3355415
- S. J. Song, K. M. Kim, G. H. Kim, M. H. Lee, J. Y. Seok, R. Jung, and C. S. Hwang, Appl. Phys. Lett. 0003-6951 96, 112904 (2010). 10.1063/1.3355415
- (2010) Appl. Phys. Lett. , vol.96 , pp. 112904
- Song, S.J.¹ Kim, K.M.² Kim, G.H.³ Lee, M.H.⁴ Seok, J.Y.⁵ Jung, R.⁶ Hwang, C.S.⁷

12
- 0038570678
- 0034-4885, 10.1088/0034-4885/27/1/307
- M. A. Lampert, Rep. Prog. Phys. 0034-4885 27, 329 (1964). 10.1088/0034-4885/27/1/307
- (1964) Rep. Prog. Phys. , vol.27 , pp. 329
- Lampert, M.A.¹

13
- 43349101629
- 0935-9648, 10.1002/adma.200702024
- S. C. Chae, J. S. Lee, S. Kim, S. B. Lee, S. H. Chang, C. Liu, B. Kahng, H. Shin, D. -W. Kim, C. U. Jung, S. Seo, M. -J. Lee, and T. W. Noh, Adv. Mater. 0935-9648 20, 1154 (2008). 10.1002/adma.200702024
- (2008) Adv. Mater. , vol.20 , pp. 1154
- Chae, S.C.¹ Lee, J.S.² Kim, S.³ Lee, S.B.⁴ Chang, S.H.⁵ Liu, C.⁶ Kahng, B.⁷ Shin, H.⁸ Kim, D.-W.⁹ Jung, C.U.¹⁰ Seo, S.¹¹ Lee, M.-J.¹² Noh, T.W.¹³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.