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Applied Physics Letters

Volumn 100, Issue 13, 2012, Pages

Analysis of the reverse leakage current in AlGaN/GaN Schottky barrier diodes treated with fluorine plasma

(7) Jin Ha, Woo a Chhajed, Sameer a Jae Oh, Seung a Hwang, Sunyong a Kyu Kim, Jong a Lee, Jae Hoon b Kim, Ki Se b

a Pohang University of Science and Technology (POSTECH) (South Korea)

b Samsung Advanced Institute of Technology (SAIT) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; CONTINUUM STATE; DEEP LEVEL; EMISSION BARRIER; FLUORINE PLASMA; FRENKEL-POOLE EMISSION; ORDERS OF MAGNITUDE; PLASMA TREATMENT; REVERSE BIAS; REVERSE LEAKAGE CURRENT; TEMPERATURE DEPENDENT; THERMALLY ACTIVATED; TRANSPORT MECHANISM;

ACTIVATION ENERGY; FLUORINE; GALLIUM NITRIDE; PLASMA APPLICATIONS; PLASMAS; SCHOTTKY BARRIER DIODES;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 84859550636 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3697684 Document Type: Article

Times cited : (52)

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