Effects of nitride-based plasma pretreatment prior to SiNx passivation in AlGaN/GaN high-electron-mobility transistors on silicon substrates

Japanese Journal of Applied Physics

Volumn 49, Issue 4 PART 2, 2010, Pages

  Kim, Ji Ha ^a,b   Choi, Hong Goo ^a   Ha, Min Woo ^a   Song, Hong Joo ^a   Roh, Cheong Hyun ^a   Lee, Jun Ho ^a   Park, Jung Ho ^b   Hahn, Cheol Koo ^a  

^a Korea Electronic Technology Institute (KETI)   (South Korea)

^b Korea University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HEMTS; ALGAN/GAN HIGH ELECTRON-MOBILITY TRANSISTORS; DEFECT REDUCTION; OPERATING CONDITION; OUTPUT CHARACTERISTICS; OUTPUT POWER; PLASMA PRE-TREATMENT; RF DISPERSION; SILICON SUBSTRATES;

DEFECT DENSITY; DEFECTS; DISPERSIONS; GALLIUM NITRIDE; NITROGEN PLASMA; PASSIVATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON NITRIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77952708255     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.49.04DF05     Document Type: Article

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