Near-surface processing on AlGaN/GaN heterostructures: A nanoscale electrical and structural characterization

Nanoscale Research Letters

Volumn 6, Issue 1, 2011, Pages

  Greco, Giuseppe ^a,b   Giannazzo, Filippo ^a   Frazzetto, Alessia ^a   Raineri, Vito ^a   Roccaforte, Fabrizio ^a  

^a CNR   (Italy)

^b SCUOLA SUPERIORE DI CATANIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM ALLOYS; ALUMINUM GALLIUM NITRIDE; ATOMIC FORCE MICROSCOPY; GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; III-V SEMICONDUCTORS; PROCESS CONTROL; RAPID THERMAL PROCESSING; SEMICONDUCTOR ALLOYS; THERMOOXIDATION; THRESHOLD VOLTAGE; CHARACTERIZATION; CRYSTALS; ELECTRIC PROPERTIES; ELECTRON MOBILITY; FLUORINE; SURFACES; TRANSMISSION ELECTRON MICROSCOPY; TWO DIMENSIONAL;

ALGAN/GAN HETEROSTRUCTURES; CHARACTERIZATION TECHNIQUES; CONDUCTIVE ATOMIC FORCE MICROSCOPY; ELECTRICAL CHARACTERIZATION; ELECTRICAL MODIFICATION; HIGH ELECTRON MOBILITY TRANSISTOR (HEMTS); NANOMETER-SCALE RESOLUTION; STRUCTURAL CHARACTERIZATION; ALGAN; ALGAN LAYERS; GATE CONTROL; GATE REGION; NANO SCALE; NEAR-SURFACE; NEGATIVE VALUES; PLASMA PROCESS; RAPID THERMAL OXIDATION; SAMPLE SURFACE; THIN OXIDE LAYERS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84255191037     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276x-6-132     Document Type: Review

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