Impact of CF4 plasma treatment on GaN

IEEE Electron Device Letters

Volumn 28, Issue 9, 2007, Pages 781-783

  Chu, Rongming ^a   Shu, Chang Soo ^a   Wong, Man Hoi ^a   Fichtenbaum, Nicolas ^a   Brown, David ^a   McCarthy, Lee ^a   Keller, Stacia ^a   Feng, Wu ^a   Speck, James S ^a   Mishra, Umesh K ^a  

^a University of California   (United States)

Author keywords

CF4 plasma; Electron depletion; EtEh; GaN; Leakage; Transistor

Indexed keywords

CF4 PLASMA; ELECTRON DEPLETION; ETEH; GAN; LEAKAGE;

GALLIUM ALLOYS; GALLIUM NITRIDE; PLASMA APPLICATIONS; PLASMAS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM;

TRANSISTORS;

EID: 41749114095     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.902849     Document Type: Article

References (11)

1. U. K. Mishra, P. Parikh, and Y. F. Wu, "AlGaN/GaN HEMTs - An overview of device operation and applications," Proc. IEEE, vol. 90, no. 6, pp. 1022-1031, Jun. 2002.
2. F. M. Mohammed, L. Wang, and I. Adesida, "Ultralow resistance Si-containing Ti/Al/Mo/Au ohmic contacts with large processing window for AlGaN/GaN heterostructures," Appl. Phys. Lett., vol. 88, no. 21, p. 212 107, May 2006.
3. 2 reactive ion etching for gate recessing in AlGaN/GaN HEMTs," IEEE Electron Device Lett., vol. 23, no. 3, pp. 118-120, Mar. 2002.
4. Y. F. Wu, M. Moore, A. Saxler, T. Wisleder, and P. Parikh, "40-W/mm double field-plated GaN HEMTs," in Proc. Dig. Device Res. Conf., Jun. 2006, pp. 151-152.
5. T. Palacios, A. Chakraborty, S. Rajan, C. Poblenz, S. Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "High-power AlGaN/GaN HEMTs for Ka-band applications," IEEE Electron Device Lett., vol. 26, no. 11, pp. 781-783, Nov. 2005.
6. Y. Cai, Y. Zhou, K. J. Chen, and K. M. Lau, "High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment," IEEE Electron Device Lett., vol. 26, no. 7, pp. 435-437, Jul. 2005.
7. Y. Cai, Y. Zhou, K. M. Lau, and K. J. Chen, "Control of threshold voltage of AlGaN/GaN HEMTs by fluoride-based plasma treatment: From depletion mode to enhancement mode," IEEE Trans. Electron Devices vol. 53, no. 9, pp. 2207-2215, Sep. 2006.
8. Y. Cai, Z. Cheng, W. C. K. Tang, K. M. Lau, and K. J. Chen, "Monolithically integrated enhancement/depletion-mode AlGaN/GaN HEMT inverters and ring oscillators using CF4 plasma treatment," IEEE Trans. Electron Devices, vol. 53, no. 9, pp. 2223-2230, Sep. 2006.
9. T. Palacios, C. S. Suh, A. Chakraborty, S. Keller, S. P. DenBaars, and U. K. Mishra, "High-performance E-mode AlGaN/GaN HEMTs," IEEE Electron Device Lett., vol. 27, no. 6, pp. 428-430, Jun. 2006.
10. L. Shen, T. Palacios, C. Poblenz, A. Corrion, A. Chakraborty, N. Fichtenbaum, S. Keller, S. P. Denbaars, J. S. Speck, and U. K. Mishra, "Unpassivated high power deeply recessed GaN HEMTs with fluorineplasma surface treatment," IEEE Electron Device Lett., vol. 27, no. 4, pp. 214-216, Apr. 2006.
11. J. Hilibrand and R. D. Gold, "Determination of the impurity distribution in junction diodes from capacitance-voltage measurements," RCA Rev., vol. 21, pp. 245-252, 1960.