Photoluminescence properties of selectively grown InN microcrystals

Physica Status Solidi - Rapid Research Letters

Volumn 6, Issue 4, 2012, Pages 157-159

  Kamimura, Jumpei ^a   Kishino, Katsumi ^a   Kikuchi, Akihiko ^a  

^a SOPHIA UNIVERSITY   (Japan)

Author keywords

InN; Microcrystals; Molecular beam epitaxy; Photoluminescence; Selective area growth

Indexed keywords

BAND FILLING EFFECTS; EXCITATION POWER; HIGH SURFACE AREA; INN; N-POLAR; PEAK ENERGY; PHOTOLUMINESCENCE PROPERTIES; PL EMISSION; PL INTENSITY; RED SHIFT; RESIDUAL CARRIER DENSITY; SELECTIVE AREA GROWTH; SURFACE ELECTRON ACCUMULATION;

MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE;

MICROCRYSTALS;

EID: 84859310429     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.201105532     Document Type: Article

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