20 meV-deep donor level in InN film of 0.76 eV band gap grown by plasma-assisted nitrogen source

Journal of Applied Physics

Volumn 95, Issue 12, 2004, Pages 7998-8001

  Wang, S Z ^a   Yoon, S F ^a   Xia, Y X ^b   Xie, S W ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b SHANGHAI JIAO TONG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; CARRIER CONCENTRATION; EPITAXIAL GROWTH; GALLIUM NITRIDE; IMPURITIES; IONIZATION; NITROGEN; PHASE TRANSITIONS; PHOTOLUMINESCENCE; SOLAR CELLS; STOICHIOMETRY;

BAND GAP; PLASMA-ASSISTED NITROGEN SOURCE; SOLID-SOURCE MOLECULAR BEAM EPITAXY; VALANCE BAND;

INDIUM COMPOUNDS;

EID: 3142601528     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1748854     Document Type: Article

References (18)

1. S. Strite and H. Morkoc, J. Vac. Sci. Technol. B 10, 1237 (1992).
2. S. K. O'Leary, B. E. Foutz, M. S. Shur, U. V. Bhapkar, and L. F. Eastman, J. Appl. Phys. 83, 826 (1998).
3. T. Inushima, V. V. Mamutin, V. A. Vekshin, S. V. Ivanov, T. Sakon, M. Motokawa, and S. Ohaya, J. Cryst. Growth 227-228, 481 (2001).
4. J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager III, E. E. Haller, H. Lu, W. J. Schaff, Y. Saito, and Y. Nanishi, Appl. Phys. Lett. 80, 3967 (2002); J. Wu, W. Walukiewicz, W. Shan, K. M. Yu, J. W. Ager III, E. E. Haller, H. Lu, and W. J. Schaff, Phys. Rev. B 66, 201 403 (2002); J. Wu, W. Walukiewicz, W. Shan, K. M. Yu, J. W. Ager III, S. X. Li, E. E. Haller, H. Lu, and W. J. Schaff, J. Appl. Phys. 94, 4457 (2003).
5. J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager III, E. E. Haller, H. Lu, W. J. Schaff, Y. Saito, and Y. Nanishi, Appl. Phys. Lett. 80, 3967 (2002); J. Wu, W. Walukiewicz, W. Shan, K. M. Yu, J. W. Ager III, E. E. Haller, H. Lu, and W. J. Schaff, Phys. Rev. B 66, 201 403 (2002); J. Wu, W. Walukiewicz, W. Shan, K. M. Yu, J. W. Ager III, S. X. Li, E. E. Haller, H. Lu, and W. J. Schaff, J. Appl. Phys. 94, 4457 (2003).
6. J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager III, E. E. Haller, H. Lu, W. J. Schaff, Y. Saito, and Y. Nanishi, Appl. Phys. Lett. 80, 3967 (2002); J. Wu, W. Walukiewicz, W. Shan, K. M. Yu, J. W. Ager III, E. E. Haller, H. Lu, and W. J. Schaff, Phys. Rev. B 66, 201 403 (2002); J. Wu, W. Walukiewicz, W. Shan, K. M. Yu, J. W. Ager III, S. X. Li, E. E. Haller, H. Lu, and W. J. Schaff, J. Appl. Phys. 94, 4457 (2003).
7. F. Bechstedt and J. Furthmuller, J. Cryst. Growth 246, 315 (2002).
8. T. Yodo, H. Yona, H. Ando, D. Nosei, and Y. Harada, Appl. Phys. Lett. 80, 968 (2002).
9. H. Lu, W. J. Schaff, J. Hwang, H. Wu, W. Yeo, A. Pharkya, and L. F. Eastman, Appl. Phys. Lett. 77, 2548 (2000).
10. D. W. Jenkins and J. D. Dow, Phys. Rev. B 39, 3317 (1989).
11. T. L. Tansley and R. J. Egan, Phys. Rev. B 45, 10942 (1992).
12. E. A. Davis, S. F. J. Cox, R. L. Lichti, and C. G. Van de Walle, Appl. Phys. Lett. 82, 592 (2003).
13. D. C. Look, H. Lu, W. J. Schaff, J. Jasinki, and Z. Liliental-Weber, Appl. Phys. Lett. 80, 258 (2002).
14. X. C. Shen, Optical Properties of Semiconductors (Science Press, Beijing, 1992), p. 312.
15. W. Z. Shen, L. F. Jiang, H. F. Yang, F. Y. Meng, H. Ogawa, and Q. X. Guo, Appl. Phys. Lett. 80, 2063 (2002).
16. M. A. Gilleo, P. T. Bailey, and D. E. Hill, Phys. Rev. 174, 898 (1968).
17. E. K. Liu, B. S. Liu, and J. S. Luo, Semiconductor Physics (Defence Industry Press, Beijing, 1994), pp. 57 and 76.
18. Semiconductor-Basic Data, edited by O. Madelung (Springer, New York, 1996).