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Journal of Applied Physics

Volumn 106, Issue 11, 2009, Pages

Carrier recombination processes in In-polar n-InN in regions of low residual electron density

(6) Ishitani, Yoshihiro a,c Kato, Kenta a Ogiwara, Hitoshi a Che, Song Bek a Yoshikawa, Akihiko a Wang, Xinqiang b

a CHIBA UNIVERSITY (Japan)

b PEKING UNIVERSITY (China)

c PANASONIC CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER RECOMBINATION; DISLOCATION DENSITIES; INN FILMS; MODEL FUNCTIONS; NO ACTIVATION; NON-RADIATIVE; PHOTOEXCITED HOLES; PHOTOLUMINESCENCE SPECTRUM; PL INTENSITY; RATE EQUATIONS; RESIDUAL ELECTRON DENSITIES; ROCKING CURVES; TEMPERATURE RANGE; THERMALLY ACTIVATED; THREADING DISLOCATION;

ACTIVATION ENERGY; CARRIER CONCENTRATION; ELECTRON DENSITY MEASUREMENT;

ELECTRONS;

EID: 72449132844 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3264718 Document Type: Article

Times cited : (10)

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