Nucleation and growth of InN thin films using conventional and pulsed MOVPE

Journal of Crystal Growth

Volumn 272, Issue 1-4 SPEC. ISS., 2004, Pages 400-406

  Johnson, M C ^a   Konsek, S L ^a,b   Zettl, A ^a,b   Bourret Courchesne, E D ^a  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

A1. Nucleation; A1. Photoluminescence; A1. Scanning Electron Microscopy; A3. Metalorganic chemical vapor deposition; B1. Indium nitride (InN); B1. Nitrides

Indexed keywords

FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; NUCLEATION; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES;

BANDGAP TRANSITIONS; GROWTH TEMPERATURE; INDIUM NITRIDE (INN);

THIN FILMS;

EID: 10044275610     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.08.057     Document Type: Conference Paper

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