The effects of surface modification on the electrical properties of p-n+ junction silicon nanowires grown by an aqueous electroless etching method

Journal of Nanoparticle Research

Volumn 14, Issue 5, 2012, Pages

  Lee, Seulah ^a   Koo, Ja Hoon ^a   Seo, Jungmok ^a   Kim, Sung Dae ^b   Lee, Kwang Hyun ^a   Im, Seongil ^a   Kim, Young Woon ^b   Lee, Taeyoon ^a  

^a Yonsei University   (South Korea)

^b University of Seoul   (South Korea)

Author keywords

Aqueous electroless etching; Nanoelectronics; Rapid thermal oxidation; Silicon nanowire; Superhydrophobicity; Surface treatment

Indexed keywords

CHEMICALS REMOVAL (WATER TREATMENT); ETCHING; FABRICATION; FORWARD SCATTERING; HALL MOBILITY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; HOLE MOBILITY; HYDROFLUORIC ACID; LIGHT ABSORPTION; LIGHT SCATTERING; NANOELECTRONICS; NANOWIRES; RAPID THERMAL PROCESSING; REGENERATORS; SILICON; SILICON OXIDES; SUPERHYDROPHILICITY; SUPERHYDROPHOBICITY; SURFACE TREATMENT; THERMOOXIDATION;

AQUEOUS ELECTROLESS ETCHINGS; CYCLING PROCESS; NANOSCALE STRUCTURE; PHOTOCURRENT DENSITY; RAPID THERMAL OXIDATION; SEQUENTIAL PROCESS; SILICON NANOWIRES; SURFACE-MODIFIED;

SURFACE ROUGHNESS;

NANOMATERIAL; NANOWIRE; SILICON; SILOXANE;

ADSORPTION; AQUEOUS SOLUTION; ARTICLE; ELECTRICITY; HYDROPHOBICITY; PRIORITY JOURNAL; SURFACE PROPERTY; TRANSMISSION ELECTRON MICROSCOPY;

EID: 84859203412     PISSN: 13880764     EISSN: 1572896X     Source Type: Journal    
DOI: 10.1007/s11051-012-0840-6     Document Type: Article

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