Fabrication and electrical and photosensitive properties of silicon nanowire p - n homojunctions

Physica Status Solidi (A) Applications and Materials Science

Volumn 205, Issue 11, 2008, Pages 2722-2728

  Fang, Guojia ^a,b   Cheng, Yanzhao ^a   Ai, Lei ^a   Li, Chun ^a   He, Jun ^a   Wang, Chong ^a   Huang, Huihui ^a   Yuan, Longyan ^a   Zhao, Xingzhong ^a  

^a WUHAN UNIVERSITY   (China)

^b INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VOLTAGES; DIFFUSION METHODS; ELECTROLESS METAL DEPOSITIONS; ELECTRON TRANSPORTS; HOMO JUNCTIONS; IDEALITY FACTORS; NANOWIRE LENGTHS; OPERATING TEMPERATURES; P-N JUNCTIONS; PHOTOSENSITIVE PROPERTIES; POTENTIAL APPLICATIONS; POTENTIAL BARRIERS; RECTIFYING BEHAVIORS; RESPONSIVITY; REVERSE BIASES; ROOM TEMPERATURES; SILICON NANOWIRES; VISIBLE LIGHTS; VOLTAGE PROPERTIES;

DISTILLATION; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; SEMICONDUCTOR JUNCTIONS; SILICON;

ELECTRIC WIRE;

EID: 55849084312     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200723266     Document Type: Article

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