Electrical transport properties in electroless-etched Si nanowire field-effect transistors

Microelectronic Engineering

Volumn 87, Issue 11, 2010, Pages 2407-2410

  Moon, Kyeong Ju ^a   Choi, Ji Hyuk ^a   Lee, Tae Il ^a   Ham, Moon Ho ^a   Maeng, Wan Joo ^a   Hwang, Inchan ^a   Kim, Hyungjun ^a   Myoung, Jae Min ^a  

^a Yonsei University   (South Korea)

Author keywords

Electrical transport; Electroless etching method; Field effect transistor; High k HfO2 dielectric; Si nanowires

Indexed keywords

ELECTRICAL TRANSPORT; ELECTROLESS; ETCHING METHOD; HIGH-K HFO; SI NANOWIRE;

DRAIN CURRENT; ELECTRIC PROPERTIES; ELECTRIC WIRE; ETCHING; GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; MESFET DEVICES; NANOWIRES; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON WAFERS; SILVER; TRANSPORT PROPERTIES;

FIELD EFFECT TRANSISTORS;

EID: 77955511506     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2010.04.015     Document Type: Article

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