Effect of electroless etching parameters on the growth and reflection properties of silicon nanowires

Nanotechnology

Volumn 22, Issue 15, 2011, Pages

  Ozdemir, Baris ^a   Kulakci, Mustafa ^a   Turan, Rasit ^a   Unalan, Husnu Emrah ^a  

^a MIDDLE EAST TECHNICAL UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER COLLECTION; CRYSTALLOGRAPHIC ORIENTATIONS; ELECTROLESS; ETCHING PARAMETERS; FIELD EMISSION SCANNING ELECTRON MICROSCOPES; LINEAR DEPENDENCY; OPTICAL REFLECTIVITY; P-N HETEROJUNCTIONS; PARAMETRIC STUDY; PHOTON ABSORPTIONS; REFLECTION PROPERTIES; REFLECTIVITY MEASUREMENTS; SILICON NANOWIRES; SILVER NITRATES; SOLUTION CONCENTRATION; VERTICALLY ALIGNED;

ETCHING; FIELD EMISSION; HETEROJUNCTIONS; HYDROFLUORIC ACID; NANOWIRES; REFLECTION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICON;

SILICON WAFERS;

EID: 79952679138     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/22/15/155606     Document Type: Article

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