Photocurrent mapping in high-efficiency radial p-n junction silicon nanowire solar cells using atomic force microscopy

Journal of Physical Chemistry C

Volumn 115, Issue 44, 2011, Pages 21981-21986

  Hwang, Jih Shang ^a   Kao, Ming Chun ^a   Shiu, Jian Min ^a   Fan, Chieh Ning ^a   Ye, Shien Chau ^a   Yu, Wen Shen ^a   Lin, Hsiu Mei ^a   Lin, Tai Yuan ^a   Chattopadhyay, Surojit ^b   Chen, Li Chyong ^c   Chen, Kuei Hsien ^d  

^a NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

^b NATIONAL YANG MING UNIVERSITY   (Taiwan)

^c NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^d INSTITUTE OF ATOMIC AND MOLECULAR SCIENCES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANTI-REFLECTION; ATOMIC FORCE MICROSCOPES; AU ELECTRODES; BROAD BANDS; COST OF PRODUCTIONS; DIFFUSION LENGTH; DIFFUSION SOURCES; FRACTURED SURFACES; HIGH EFFICIENCY; JUNCTION FABRICATION TECHNIQUES; P-N JUNCTION; P-N JUNCTION FORMATION; PHOTOGENERATED CURRENT; POWER CONVERSION EFFICIENCIES; SILICON NANOWIRES; SPECTRAL QUANTUM EFFICIENCY; THERMAL BUDGET;

ATOMIC FORCE MICROSCOPY; CONVERSION EFFICIENCY; NANOWIRES; SEMICONDUCTOR JUNCTIONS;

EFFICIENCY;

EID: 80455174481     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp205151d     Document Type: Article

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