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Volumn 5, Issue 2, 2005, Pages 275-280
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Controlled fabrication of silicon nanowires by electron beam lithography and electrochemical size reduction
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Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRIC CONDUCTIVITY;
ELECTROCHEMISTRY;
ELECTROLYTIC POLISHING;
ELECTRON BEAM LITHOGRAPHY;
ETCHING;
MORPHOLOGY;
PHOTOLITHOGRAPHY;
SILICON;
CHARGED SURFACE STATES;
ELECTROCHEMICAL ETCHING;
ELECTROCHEMICAL SIZE REDUCTION;
SILICON NANOWIRES;
NANOSTRUCTURED MATERIALS;
NANOTUBE;
SILICON;
ARTICLE;
CHEMISTRY;
COMPARATIVE STUDY;
CONFORMATION;
CRYSTALLIZATION;
ELECTROCHEMISTRY;
ELECTRON;
EVALUATION;
MATERIALS TESTING;
METHODOLOGY;
NANOTECHNOLOGY;
PARTICLE SIZE;
RADIATION EXPOSURE;
ULTRASTRUCTURE;
CRYSTALLIZATION;
ELECTROCHEMISTRY;
ELECTRONS;
MATERIALS TESTING;
MOLECULAR CONFORMATION;
NANOTECHNOLOGY;
NANOTUBES;
PARTICLE SIZE;
SILICON;
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EID: 14644409706
PISSN: 15306984
EISSN: None
Source Type: Journal
DOI: 10.1021/nl0481573 Document Type: Article |
Times cited : (118)
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References (18)
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