Characterization of quantum conducting channels in metal/molecule/metal devices using pressure-modulated conductance microscopy

Applied Physics A: Materials Science and Processing

Volumn 102, Issue 4, 2011, Pages 943-948

  Miao, Feng ^a,b   Ohlberg, Douglas A A ^b   Williams, R Stanley ^b   Lau, Chun Ning ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BALLISTIC REGIME; CONDUCTING CHANNELS; ELECTRON TRANSPORT; ELECTRON WAVE INTERFERENCE; NANO SCALE; NANOELECTRONIC CIRCUITS; PRESSURE RESPONSE; ROOM TEMPERATURE; SWITCHING DEVICES; WAVE VECTOR;

ELECTRON TRANSPORT PROPERTIES; NANOELECTRONICS; NANOSTRUCTURED MATERIALS;

ELECTRON TRANSITIONS;

EID: 79959333201     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-011-6298-z     Document Type: Article

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