Feedback write scheme for memristive switching devices

Applied Physics A: Materials Science and Processing

Volumn 102, Issue 4, 2011, Pages 973-982

  Yi, Wei ^a   Perner, Frederick ^a   Qureshi, Muhammad Shakeel ^a   Abdalla, Hisham ^a   Pickett, Matthew D ^a   Yang, J Joshua ^a   Zhang, Min Xian Max ^a   Medeiros Ribeiro, Gilberto ^a   Williams, R Stanley ^a  

^a Information and Quantum Systems Lab   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CLOSED-LOOP; CURRENT DRIVERS; CURRENT FEEDBACK; DEVICE OPERATIONS; DRIFT DIFFUSION; DYNAMICAL BEHAVIORS; ELECTRONIC TRANSPORT; FEED-BACK LOOP; IONIZED DOPANTS; LOG-NORMAL DISTRIBUTION; NANO SCALE; NON-VOLATILE MEMORY APPLICATION; RESISTANCE VALUES; SCANNING TUNNELING MICROSCOPES; SPICE MODEL; STATE VARIABLES; STATISTICAL DISTRIBUTION; SWITCHING DEVICES; SWITCHING DYNAMICS; TIO; TUNNEL BARRIER; UPPER LIMITS; WRITE OPERATIONS;

DIGITAL DEVICES; FILM THICKNESS; OXYGEN VACANCIES; SEMICONDUCTOR DEVICES; STATE FEEDBACK; SWITCHING; TITANIUM DIOXIDE;

EQUIPMENT;

EID: 79959342174     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-011-6279-2     Document Type: Article

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