Recent calculations and measurements of I-V relations in simple devices based on thin nano versus thick layers of semiconductors with mobile acceptors or donors

Solid State Ionics

Volumn 179, Issue 21-26, 2008, Pages 1187-1193

  Gil, Y ^a   Umurhan, O M ^a   Tsur, Y ^a   Riess, I ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

Aging; I V relations; MIEC; Mobile defects; Nano thin devices

Indexed keywords

ELECTRIC CONDUCTIVITY; EQUATIONS OF MOTION; METALLIZING; METALS;

CONTACT POTENTIALS; CONTROLLING PARAMETERS; DEFECT DISTRIBUTIONS; DEGREE OF IONIZATION; DOPANT IMPURITIES; ELECTRON HOPPING; I-V RELATIONS; INERT ELECTRODES; IONIC DEFECTS; MAIN FACTORS; PHYSICAL CONSTRAINTS; SEMI CONDUCTIVITY; THICK LAYERS;

SEMICONDUCTOR MATERIALS;

EID: 48349132052     PISSN: 01672738     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssi.2008.01.001     Document Type: Article

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