Impact of high temperature annealing on la diffusion and flatband voltage (V fb) modulation in TiN/LaO x/HfSiON/SiON/Si gate stacks

Journal of Applied Physics

Volumn 111, Issue 5, 2012, Pages

  Boujamaa, R ^a   Baudot, S ^a   Rochat, N ^b   Pantel, R ^a   Martinez, E ^b   Renault, O ^b   Detlefs, B ^c   Zegenhagen, J ^c   Loup, V ^c   Martin, F ^b   Gros Jean, M ^a   Bertin, F ^a   Dubourdieu, C ^d,e  

^a STMICROELECTRONICS   (France)

^b CEA LETI   (France)

^c EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

^d LABORATOIRE DES MATÉRIAUX ET DU GÉNIE PHYSIQUE   (France)

^e IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND ALIGNMENTS; CAPPING LAYER; FIXED CHARGES; FLAT-BAND VOLTAGE; GATE STACKS; HAFNIUM SILICATES; HARD X-RAY PHOTOELECTRON SPECTROSCOPY; HIGH-TEMPERATURE ANNEALING; INTERFACE TRAP DENSITY; INTERFACIAL DIPOLES; INTERFACIAL LAYER; NITRIDED; SUBSTRATE INTERFACE; TIN METAL GATE; ULTRA-THIN;

CHEMICAL ANALYSIS; DIELECTRIC MATERIALS; ELECTRONIC PROPERTIES; HAFNIUM COMPOUNDS; INTERFACES (MATERIALS); LOGIC GATES; SILICATES; TITANIUM NITRIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

VANADIUM;

EID: 84858986858     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3684709     Document Type: Article

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