SCOPUS 정보 검색 플랫폼

ECS Transactions

Volumn 16, Issue 5, 2009, Pages 19-26

Engineering high dielectric constant materials for band-edge CMOS applications

(3) Jagannathan, H a Narayanan, V b Brown, S b

a IBM RESEARCH (United States)

b IBM T J WATSON RESEARCH CENTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ALUMINUM OXIDE; CMOS INTEGRATED CIRCUITS; DIELECTRIC DEVICES; DIELECTRIC MATERIALS; GATE DIELECTRICS; HAFNIUM OXIDES; MAGNESIA; OXIDE MINERALS; THRESHOLD VOLTAGE;

CAPPING LAYER; CMOS DEVICES; GATE STACKS; HIGH DIELECTRIC CONSTANT MATERIALS; MAXIMUM VOLTAGE SHIFTS; PROCESS TEMPERATURE; THRESHOLD VOLTAGE SHIFTS; VOLTAGE SHIFT;

HIGH-K DIELECTRIC;

EID: 63149137761 PISSN: 19385862 EISSN: 19386737 Source Type: Conference Proceeding
DOI: 10.1149/1.2981584 Document Type: Conference Paper

Times cited : (68)

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