Improved conductance method for determining interface trap density of metal-oxide-semiconductor device with high series resistance

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 44, Issue 46-49, 2005, Pages

  Yang, Hyundoek ^a   Son, Yunik ^a   Choi, Sangmoo ^a   Hwang, Hyunsang ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

Conductance; Equivalent circuit; Interface trap density; MOS; Series resistance

Indexed keywords

CAPACITANCE; ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; EQUIVALENT CIRCUITS; INTERFACES (MATERIALS); MATHEMATICAL MODELS; PHOTODEGRADATION;

CONDUCTANCE; INTERFACE TRAP DENSITY; MOS; SERIES RESISTANCE;

MOS DEVICES;

EID: 31844452597     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.L1460     Document Type: Article

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