Automatic statistical full quantum analysis of C-V and I-V characteristics for advanced MOS gate stacks

Microelectronic Engineering

Volumn 84, Issue 9-10, 2007, Pages 2408-2411

  Leroux, C ^a   Allain, F ^a   Toffoli, A ^a   Ghibaudo, G ^b   Reimbold, G ^a  

^a CEA LETI   (France)

^b MINATEC   (France)

Author keywords

Characterization; EOT; Flat Band; VFB; Work function

Indexed keywords

GATES (TRANSISTOR); MOS DEVICES; QUANTUM THEORY; STATISTICAL METHODS; THRESHOLD VOLTAGE;

EQUIVALENT OXIDE THICKNESS (EOT); FLAT BAND VOLTAGE (FBV); GATE STACKS; WORK FUNCTIONS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 34248635165     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.04.026     Document Type: Article

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