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Volumn 108, Issue 11, 2010, Pages

Systematic study of the effect of La2 O3 incorporation on the flatband voltage and Si band bending in the TiN/ HfO 2 / SiO2 /p-Si stack

(6) Di, Ming a Bersch, Eric a Clark, Robert D b Consiglio, Steven b Leusink, Gert J b Diebold, Alain C a

a STATE UNIVERSITY OF NEW YORK (United States)

b TEL TECHNOLOGY CENTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND ALIGNMENTS; BANDBENDING; EXPERIMENTAL MEASUREMENTS; FLAT-BAND VOLTAGE; GATE DEVICES; LAYER THICKNESS; SYSTEMATIC CHANGES; SYSTEMATIC STUDY; VALENCE BAND OFFSETS;

HAFNIUM; HAFNIUM COMPOUNDS; MOS DEVICES; SILICON COMPOUNDS;

SILICON;

EID: 78751537872 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3516483 Document Type: Article

Times cited : (17)

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