Band bending measurement of HfO 2 /SiO 2 /Si capacitor with ultra-thin La 2 O 3 insertion by XPS

Applied Surface Science

Volumn 254, Issue 19, 2008, Pages 6106-6108

  Kakushima, K ^a   Okamoto, K ^a   Adachi, M ^a   Tachi, K ^a   Song, J ^a   Sato, S ^a   Kawanago, T ^a   Ahmet, P ^a   Tsutsui, K ^a   Sugii, N ^a   Hattori, T ^a   Iwai, H ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Flat band voltage; Hard X ray photoemission spectroscopy (HX PES); High k

Indexed keywords

BINDING ENERGY; HAFNIUM OXIDES; LANTHANUM OXIDES; SILICA; SILICON; X RAYS;

BANDBENDING; FLAT-BAND VOLTAGE; FLAT-BAND VOLTAGE SHIFT; HARD X-RAY PHOTOELECTRON SPECTROSCOPY; HARD X-RAY PHOTOEMISSION SPECTROSCOPY; HIGH- K; SI SUBSTRATES; VOLTAGE DROP;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 45049086668     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.02.177     Document Type: Article

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