Comparison of nitrided HfO 2 films deposited in O 2 and N 2O by direct liquid injection CVD

Journal of the Electrochemical Society

Volumn 153, Issue 1, 2006, Pages

  Luo, Qian ^a   Dragomir Cernatescu, Iuliana ^b   Snyder, Robert L ^b   Rees Jr , Will S ^a,b   Hess, Dennis W ^b,c  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b Georgia Institute of Technology   (United States)

^c ELECTROCHEMICAL SOCIETY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE PHASES; LIQUID INJECTION; OXIDANTS;

ACTIVATION ANALYSIS; CHEMICAL VAPOR DEPOSITION; HAFNIUM COMPOUNDS; NITROGEN OXIDES; OXYGEN; SILICON;

THIN FILMS;

EID: 84858580672     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2128119     Document Type: Article

References (28)

1. G. Wilk, R. Wallace, and J. Anthony, J. Appl. Phys., 89, 5243 (2001).
2. E. P. Gusev, M. Copel, E. Cartier, I. J. R. Baumvol, C. Krug, and M. A. Gribelyuk, Appl. Phys. Lett., 76, 176 (2000).
3. M. Houssa, V. V. Afanas'ev, A. Stesmans, and M. M. Heyns, Appl. Phys. Lett., 77, 1885 (2000).
4. B. H. Lee, L. Kang, R. Nieh, W. Qi, and J. C. Lee, Appl. Phys. Lett., 76, 1926 (2000).
5. S. A. Campbell, T. Z. Ma, R. Smith, W. L. Gladfelter, and F. Chen, Microelectron. Eng., 59, 361 (2001).
6. K. J. Choi, W. C. Shin, and S. G. Yoon, J. Electrochem. Soc., 149, F18 (2002).
7. Y. Senzaki, G. Alers, A. Hochberg, D. Roberts, J. T. Norman, R. Fleming, and H. Krautter, Electrochem. Solid-State Lett., 3, 435 (2000).
8. E. L. Mays, D. W. Hess, and W. S. Rees, Jr., J. Cryst. Growth, 261, 309 (2004).
9. M. S. Akbar, H. J. Cho, R. Choi, C. S. Kang, C. Y. Kang, C. H. Choi, S. J. Rhee, Y. H. Kim, and J. C. Lee, IEEE Electron Device Lett., 25, 465 (2004).
10. Y. Ohshita, A. Ogura, A. Hoshino, S. Hiiro, T. Suzuki, and H. Machida, Thin Solid Films, 406, 215 (2002).
11. J. Schaeffer, N. V. Edwards, R. Liu, D. Roan, B. Hradsky, R. Gregory, J. Kulik, E. Duda, L. Contreras, J. Christiansen, S. Zollner, P. Tobin, B. Y. Nguyen, R. Nieh, M. Ramon, R. Rao, R. Hegde, R. Rai, J. Baker, and S. Voight, J. Electrochem. Soc., 150, F67 (2003).
12. P. A. Williams, A. C. Jones, N. L. Tobin, P. R. Chalker, S. Taylor, P. A. Marshall, J. F. Bickley, L. M. Smith, H. O. Davies, and G. W. Critchlow, Chem. Vap. Deposition, 9, 309 (2003).
13. K. Takahashi, M. Nakayama, S. Yokoyama, T. Kimura, E. Tokumitsu, and H. Funakubo, Appl. Surf. Sci., 216, 296 (2003).
14. W. Lo, A. Kamath, S. Kher, C. Metzner, J. Wen, and Z. Chen, J. Mater. Res., 19, 1775 (2004).
15. C. H. Choi, T. S. Jeon, R. Clark, and D. L. Kwong, IEEE Electron Device Lett., 24, 215 (2003).
16. M. Lee, Z. H. Lu, W. T. Ng, D. Landheer, X. Wu, and S. Moisa, Appl. Phys. Lett., 83, 2638 (2003).
17. C. Zhao, S. V. Elshocht, T. Conard, Z. Xu, O. Richard, M. Caymax, S. D. Gendt, and M. Heyns, in Physics and Technology of High-k Gate Dielectrics II, S. Kar, R. Singh, D. Misra, H. Iwai, M. Houssa, J. Morais, and, D. Landheer, Editors, PV 2003-22, p. 101, The Electrochemical Society Proceedings Series, Pennington, NJ (2003).
18. B. O. Cho, J. Wang, and J. P. Chang, J. Appl. Phys., 92, 4238 (2002).
19. M. K. Song, S. W. Kang, and S. W. Rhee, Thin Solid Films, 450, 272 (2004).
20. L. Xie, Y. Zhao, and M. H. White, Solid-State Electron., 48, 2071 (2004).
21. S. V. Elshocht, M. Baklanov, B. Brijs, R. Carter, M. Caymax, L. Carbonell, M. Claes, T. Conard, V. Cosnier, L. Cate, S. D. Gendt, J. Kluth, D. Pique, O. Richard, D. Vanhaeren, G. Vereecke, T. Witters, C. Zhao, and M. Heyns, J. Electrochem. Soc., 151, F228 (2004).
22. J. Robertson, J. Appl. Phys., 28, 265 (2004).
23. I. Dragomir-Cernatescu, Q. Luo, W. S. Rees, Jr., D. W. Hess, and R. L. Snyder, In preparation.
24. J. Chen, W. J. Yoo, D. S. H. Chan, and D. L. Kwong, Electrochem. Solid-State Lett., 7, F18 (2004).
25. C. Lee, J. Choi, M. Cho, J. Park, C. S. Hwang, H. J. Kim, and J. Jeong, J. Vac. Sci. Technol. B, 22, 1838 (2004).
26. A. Khandelwal, B. C. Smith, and H. H. Lamb, J. Appl. Phys., 90, 3100 (2001).
27. P. Chen, H. B. Bhandari, and T. M. Klein, Appl. Phys. Lett., 85, 1574 (2004).
28. A. Koukab, A. Bath, and E. Losson, Solid-State Electron., 41, 635 (1997).