Deposition and characterization of zirconium tin titanate thin films as a potential high-k material for electronic devices

Journal of Crystal Growth

Volumn 261, Issue 2-3, 2004, Pages 309-315

  Mays, E L ^a   Hess, Dennis W ^b   Rees Jr , William S ^a,c  

^a Georgia Institute of Technology   (United States)

^b Parker H Petit Institute of Bioengineering and Biosciences   (United States)

^c Parker H Petit Institute of Bioengineering and Bioscience   (United States)

Author keywords

A3. Metalorganic chemical vapor deposition; B1. Oxides; B1. Titanium compounds; B1. Zirconium tin titanate; B2. Dielectric materials

Indexed keywords

COMPOSITION; DEPOSITION; ELECTRONIC EQUIPMENT; EVAPORATION; FILM GROWTH; GROWTH KINETICS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PERMITTIVITY; SILICON COMPOUNDS; STOICHIOMETRY; TITANIUM COMPOUNDS; ZIRCONIUM COMPOUNDS;

DIRECT LIQUID INJECTION (DLI); LIQUID FLOW CONTROLLERS;

THIN FILMS;

EID: 0346154897     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.11.039     Document Type: Conference Paper

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