Molecular beam epitaxial growth and characterization of catalyst-free InN/In xGa 1-xN core/shell nanowire heterostructures on Si(111) substrates

Nanotechnology

Volumn 23, Issue 8, 2012, Pages

  Cui, Kai ^a   Fathololoumi, Saeed ^a   Golam Kibria, Md ^a   Botton, Gianluigi A ^b   Mi, Zetian ^a  

^a MCGILL UNIVERSITY   (Canada)

^b MCMASTER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONFINEMENTS; CATALYST-FREE; CORE/SHELL; CRYSTALLINE QUALITY; ELEMENTAL MAPPING; EMISSION PEAKS; ENERGY DISPERSIVE X-RAY SPECTROMETRY; INTERNAL QUANTUM EFFICIENCY; MOLECULAR BEAM EPITAXIAL GROWTH; NANO SCALE; NANOWIRE HETEROSTRUCTURES; OPTICAL CHARACTERIZATION; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; ROOM TEMPERATURE; SI(111) SUBSTRATE;

EPITAXIAL GROWTH; GALLIUM; GALLIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

NANOWIRES;

GALLIUM; GALLIUM NITRIDE; HEAVY ION; INDIUM; INDIUM NITRIDE; NANOMATERIAL; QUANTUM DOT; SILICON;

ARTICLE; CATALYSIS; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; PARTICLE SIZE; POROSITY; RADIATION EXPOSURE; SURFACE PROPERTY; ULTRASTRUCTURE;

CATALYSIS; CRYSTALLIZATION; GALLIUM; HEAVY IONS; INDIUM; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MOLECULAR CONFORMATION; NANOSTRUCTURES; PARTICLE SIZE; POROSITY; QUANTUM DOTS; SILICON; SURFACE PROPERTIES;

EID: 84856837502     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/23/8/085205     Document Type: Article

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