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Journal of Vacuum Science and Technology B

Volumn 28, Issue 3, 2010, Pages

Optimization of the structural and optical quality of InN nanowires on Si(111) by molecular beam epitaxy

(3) Chang, Y L a Li, F a Mi, Z a

a MCGILL UNIVERSITY (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

III-V SEMICONDUCTORS; INDIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOWIRES; NITROGEN COMPOUNDS; OPTICAL PROPERTIES; STRUCTURAL OPTIMIZATION;

FLUX RATIO; HIGH QUALITY; INN NANOWIRES; MOLECULAR-BEAM EPITAXY; OPTICAL QUALITIES; OPTIMISATIONS; RADIO-FREQUENCY PLASMA-ASSISTED MOLECULAR-BEAM EPITAXIES; SEEDING LAYERS; STRUCTURAL AND OPTICAL PROPERTIES; STRUCTURAL QUALITIES;

SILICON COMPOUNDS;

EID: 77953003212 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3292560 Document Type: Conference Paper

Times cited : (11)

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