High quality InxGa1-xN thin films with x > 0.2 grown on silicon

Physica Status Solidi (B) Basic Research

Volumn 247, Issue 7, 2010, Pages 1747-1749

  Gherasoiu, I ^a   Yu, K M ^b   Reichertz, L A ^b   Kao, V M ^b   Hawkridge, M ^b   Ager, J W ^b   Walukiewicz, W ^a,b  

^a RoseStreet Labs Energy   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

III V semiconductors; Photoluminescence; Rutherford Backscattering spectroscopy

Indexed keywords

EID: 77954602628     PISSN: 03701972     EISSN: 15213951     Source Type: Journal    
DOI: 10.1002/pssb.200983462     Document Type: Article

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