High hole concentration in Mg-doped a -plane Ga1-x Inx N (0 (5) Iida, Daisuke a Iwaya, Motoaki a Kamiyama, Satoshi a Amano, Hiroshi a Akasaki, Isamu a a MEIJO UNIVERSITY (Japan)

Applied Physics Letters

Volumn 93, Issue 18, 2008, Pages

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CONCENTRATION (PROCESS); CORUNDUM; CRYSTAL GROWTH; ELECTRIC PROPERTIES; EPITAXIAL FILMS; GALLIUM ALLOYS; GALLIUM NITRIDE; MAGNESIUM PRINTING PLATES; SAPPHIRE; SECONDARY BATTERIES; SEMICONDUCTING GALLIUM; SUBSTRATES; VAPOR PHASE EPITAXY; VAPORS;

A PLANES; ELECTRICAL PROPERTIES; LATERAL OVERGROWTHS; METAL ORGANIC; MG ACCEPTORS; PLANE SAPPHIRES; ROOM TEMPERATURES; SIDE-WALLS;

HOLE CONCENTRATION;

EID: 55849104343     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3021087     Document Type: Article

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