InN p-i-n nanowire solar cells on Si

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 17, Issue 4, 2011, Pages 1062-1069

  Nguyen, Hieu Pham Trung ^a   Chang, Yi Lu ^a   Shih, Ishiang ^a   Mi, Zetian ^a  

^a MCGILL UNIVERSITY   (Canada)

Author keywords

Nanotechnology; optoelectronic devices; p i n diodes; solar cells

Indexed keywords

CDS; HOMOJUNCTION; IN-SITU; INN NANOWIRES; MG-DOPED; NANOWIRE STRUCTURES; P-TYPE; P-TYPE DOPING; PHOTOVOLTAICS; PIN DIODE; POWER CONVERSION EFFICIENCIES; SEEDING LAYERS; SI(111) SUBSTRATE; STRUCTURAL AND OPTICAL PROPERTIES; SURFACE PASSIVATION;

CADMIUM COMPOUNDS; CADMIUM SULFIDE; CONVERSION EFFICIENCY; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOTECHNOLOGY; NANOWIRES; OPTICAL PROPERTIES; OPTOELECTRONIC DEVICES; PASSIVATION; SILICON;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 80051684306     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2010.2082505     Document Type: Article

References (49)

1. xN alloys: Full-solar-spectrum photovoltaic material system," J. Appl. Phys., vol. 94, pp. 6477-6482, Nov. 15, 2003.
2. O. Jani, I. Ferguson, C. Honsberg, and S. Kurtz, "Design and characterization of GaN/InGaN solar cells," Appl. Phys. Lett., vol. 91, pp. 132117-1-1132117-3, Sep. 24, 2007.
3. 1-xN tandem PV structures," Sol. Energ. Mat. Sol. Cells., vol. 87, pp. 595-603, May 2005. (Pubitemid 40556604)
4. X.M. Cai, S.W. Zeng, and B. P. Zhang, "Fabrication and characterization of InGaN p-i-n homojunction solar cell," Appl. Phys. Lett., vol. 95, pp. 173504-1-173504-3, Oct. 26, 2009.
5. L. Hsu and W.Walukiewicz, "Modeling of InGaN/Si tandem solar cells," J. Appl. Phys., vol. 104, pp. 024507-1-024507-7, Jul. 15, 2008.
6. J. Wu, W. Walukiewicz, W. Shan, K. Yu, J. Ager, S. Li, E. Haller, H. Lu, andW. Schaff, "Temperature dependence of the fundamental band gap of InN," J. Appl. Phys., vol. 94, pp. 4457-4460, Oct. 1, 2003.
7. C.Neufeld,N. Toledo, S. Cruz,M. Iza, S. DenBaars, andU.Mishra, "High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap," Appl. Phys. Lett., vol. 93, pp. 143502-1-143502-3, Oct. 6, 2008.
8. E. Trybus, G. Namkoong, W. Henderson, S. Burnham, W. Doolittle, M. Cheung, and A. Cartwright, "InN: A material with photovoltaic promise and challenges," J. Cryst. Growth, vol. 288, pp. 218-224, Mar. 1, 2006. (Pubitemid 43243840)
9. 1-xN two-junction solar cells," J. Phys. D: Appl. Phys., vol. 41, p. 245104, Dec. 21, 2008.
10. C. H. Henry, "Limiting efficiencies of ideal single and multiple energy gap terrestrial solar cells," J. Appl. Phys., vol. 51, pp. 4494-4500, Aug. 1980.
11. x N/Si Ge (0 > x > 0.6) heterojunction solar cells, Sol. Energ. Mat. Sol. Cells., 90, 982-997, May 5, 2006 (Pubitemid 43290570)
12. Y. J. Dong, B. Z. Tian, T. J. Kempa, and C. M. Lieber, "Coaxial group III-nitride nanowire photovoltaics," Nano Lett., vol. 9, pp. 2183-2187, May 2009.
13. K. H. Yu and J. H. Chen, "Enhancing solar cell efficiencies through 1-D nanostructures," Nanoscale Res. Lett., vol. 4, pp. 1-10, Jan. 2009.
14. Z. Cai, S. Garzon, M. Chandrashekhar, R.Webb, and G. Koley, "Synthesis and properties of high-quality InN nanowires and nanonetworks," J. Electron. Mater., vol. 37, pp. 585-592, May 2008.
15. C. Chao, J.Chyi, C. Hsiao,C.Kei, S.Kuo, H. Chang, andT.Hsu, "Catalystfree growth of indium nitride nanorods by chemical-beam epitaxy," Appl. Phys. Lett., vol. 88, pp. 233111-1-233111-3, Jun. 5, 2006.
16. C. Liang, L. Chen, J. Hwang, K. Chen, Y. Hung, and Y. Chen, "Selectivearea growth of indium nitride nanowires on gold-patterned Si(100) substrates," Appl. Phys. Lett., vol. 81, pp. 22-24, Jul. 1, 2002.
17. T. Stoica, R. Meijers, R. Calarco, T. Richter, and H. Luth, "MBE growth optimization of InN nanowires," J. Cryst. Growth, vol. 290, pp. 241-247, Apr. 15, 2006.
18. J. Grandal, M. Sanchez-Garcia, E. Calleja, E. Luna, and A. Trampert, "Accommodation mechanism of InN nanocolumns grown on Si(1 1 1) substrates by molecular beam epitaxy," Appl. Phys. Lett., vol. 91, pp. 021902-1-021902-3, Jul. 9, 2007.
19. J. Segura-Ruiz, N. Garro, A. Cantarero, C. Denker, J. Malindretos, and A. Rizzi, "Optical studies of MBE-grown InN nanocolumns: Evidence of surface electron accumulation," Phys. Rev. B, vol. 79, pp. 115305-1-115305-9, Mar. 2009.
20. T. Stoica, R. Meijers, R. Calarco, T. Richter, E. Sutter, and H. Luth, "Photoluminescence and intrinsic properties of MBE-grown InN nanowires," Nano Lett., vol. 6, pp. 1541-1547, Jul. 12, 2006. (Pubitemid 44195344)
21. V. Darakchieva, T. Hofmann, M. Schubert, B. E. Sernelius, B. Monemar, P. O. A. Persson, F. Giuliani, E. Alves, H. Lu, and W. J. Schaff, "Free electron behavior in InN: On the role of dislocations and surface electron accumulation," Appl. Phys. Lett., vol. 94, pp. 022109-1-022109-3, Jan. 12, 2009.
22. M. Feneberg, J. Daubler, K. Thonke, R. Sauer, P. Schley, and R. Goldhahn, "Mahan excitons in degenerate wurtzite InN: Photoluminescence spectroscopy and reflectivity measurements," Phys. Rev. B, vol. 77, pp. 245207-1-245207-6, Jun. 2008.
23. A. Janotti and C. G. Van deWalle, "Sources of unintentional conductivity in InN," Appl. Phys. Lett., vol. 92, pp. 032104-1-032104-3, Jan. 21, 2008.
24. C. G. Van deWalle and J. Neugebauer, "Universal alignment of hydrogen levels in semiconductors, insulators and solutions," Nature, vol. 423, pp. 626-628, Jun. 5, 2003. (Pubitemid 36713219)
25. E. Calleja, J. Grandal, M. Sanchez-Garcia, M. Niebelschutz, V. Cimalla, and O. Ambacher, "Evidence of electron accumulation at nonpolar surfaces of InN nanocolumns," Appl. Phys. Lett., vol. 90, pp. 262110-1-262110-3, Jun. 25, 2007.
26. J. H. Song, T. Akiyama, and A. J. Freeman, "Stabilization of bulk p-type and surface n-type carriers in Mg-doped InN {0001} films," Phys. Rev. Lett., vol. 101, pp. 186801-1-186801-4, Oct. 31, 2008.
27. P. A. Anderson, C. H. Swartz, D. Carder, R. J. Reeves, S. M. Durbin, S. Chandril, and T. H. Myers, "Buried p-type layers in mg-doped InN," Appl. Phys. Lett., vol. 89, pp. 184104-1-184104-3, Oct. 30, 2006.
28. X. Q. Wang, S. B. Che, Y. Ishitani, and A. Yoshikawa, "Growth and properties of Mg-doped in-polar InN films," Appl. Phys. Lett., vol. 90, pp. 201913-1-201913-3, May 14, 2007.
29. R. Kudrawiec, T. Suski, J. Serafinczuk, J. Misiewicz, D. Muto, and Y. Nanishi, "Photoreflectance of InN and InN: Mg layers: An evidence of Fermi level shift toward the valence band upon Mg doping in InN," Appl. Phys. Lett., vol. 93, pp. 131917-1-131917-3, Sep. 29, 2008.
30. R. E. Jones, K. M. Yu, S. X. Li,W.Walukiewicz, J.W. Ager, E. E. Haller, H. Lu, andW. J. Schaff, "Evidence for p-type doping of InN," Phys. Rev. Lett., vol. 96, pp. 125505-1-125505-4, Mar. 31, 2006.
31. I. Mahboob, T. Veal, C. McConville, H. Lu, and W. Schaff, "Intrinsic electron accumulation at clean InN surfaces," Phys. Rev. Lett., vol. 92, pp. 036804-1-036804-4, Jan. 23, 2004.
32. C. L. Wu, H. M. Lee, C. T. Kuo, C. H. Chen, and S. Gwo, "Absence of Fermi-level pinning at cleaved nonpolar InN surfaces," Phys. Rev. Lett., vol. 101, pp. 106803-1-106803-4, Sep. 5, 2008.
33. B. Beaumont, S. Haffouz, and P. Gibart, "Magnesium induced changes in the selective growth of GaN by metalorganic vapor phase epitaxy," Appl. Phys. Lett., vol. 72, pp. 921-923, Feb. 23, 1998. (Pubitemid 128674094)
34. F. Furtmayr,M. Vielemeyer,M. Stutzmann, J. Arbiol, S. Estrade, F. Peiro, J. R. Morante, andM. Eickhoff, "Nucleation and growth of GaN nanorods on Si (1 1 1) surfaces by plasma-assisted molecular beam epitaxy-The influence of Si-and Mg-doping," J. Appl. Phys., vol. 104, pp. 034309-1-034309-7, Aug. 1, 2008.
35. Y. L. Chang, F. Li, A. Fatehi, and Z. Mi, "Molecular beam epitaxial growth and characterization of non-tapered InN nanowires on Si(1 1 1)," Nanotechnology, vol. 20, p. 345203, Aug. 26, 2009.
36. Y. L. Chang, F. Li, and Z. Mi, "Optimization of the structural and optical quality of InN nanowires on Si(1 1 1) by molecular beam epitaxy," J. Vac. Sci. Technol. B, vol. 28, pp. C3B7-C3B11, May 2010.
37. M. Moret, S. Ruffenach, O. Briot, and B. Gil, "The determination of the bulk residual doping in indium nitride films using photoluminescence," Appl. Phys. Lett., vol. 95, pp. 031910-1-031910-3, Jul. 20, 2009.
38. S. P. Fu, T. T. Chen, and Y. F. Chen, "Photoluminescent properties of InN epifilms," Semicond. Sci. Technol., vol. 21, pp. 244-249, Mar. 2006.
39. Y. L. Chang, J. L.Wang, F. Li, and Z. Mi, "High efficiency green, yellow, and amber emission from InGaN/GaN dot-in-a-wire heterostructures on Si(1 1 1)," Appl. Phys. Lett., vol. 96, pp. 013106-1-013106-3, Jan. 4, 2010.
40. F. Qian, Y. Li, S. Gradecak, D.Wang, C. Barrelet, and C. Lieber, "Gallium nitride-based nanowire radial heterostructures for nanophotonics," Nano Lett., vol. 4, pp. 1975-1979, Oct. 2004.
41. H. Du, I. Shih, and C. Champness, "Monocrystalline CulnSe(2) photovoltaic cell of superior performance," J. Vac. Sci. Technol. A, vol. 22, pp. 1023-1026, May/Jun. 2004.
42. K. S. Ramaiah, V. S. Raja, A. K. Bhatnagar, R. D. Tomlinson, R. D. Pilkington, A. E. Hill, S. J. Chang, Y. K. Su, and F. S. Juang, "Optical, structural and electrical properties of tin doped indium oxide thin films prepared by spray-pyrolysis technique," Semicond. Sci. Technol., vol. 15, pp. 676-683, Jul. 2000.
43. M. A. Contreras, B. Egaas, K. Ramanathan, J. Hiltner, A. Swartzlander, F. Hasoon, and R.Noufi, "Progress toward 20% efficiency in Cu(In,Ca)Se-2 polycrystalline thin-film solar cells," Prog. Photovolt: Res. Appl., vol. 7, pp. 311-316, Jul./Aug. 1999.
44. J. S. Li, H. Y. Yu, S. M. Wong, X. C. Li, G. Zhang, P. G. Q. Lo, and D. L. Kwong, "Design guidelines of periodic Si nanowire arrays for solar cell application," Appl. Phys. Lett., vol. 95, pp. 243113-1-243113-3, Dec. 14, 2009.
45. O. V. Galan, J. V. Larramendi, I. Riech, G. Pena, A. Iribarren, J. Aguilar-Hernandez, and G. Contreras-Puente, "Characterization of the passivation of CdS thin films grown by chemical bath deposition on InP," Semicond. Sci. Technol., vol. 17, pp. 1193-1197, Nov. 2002. (Pubitemid 35359529)
46. W. Wei, X. Y. Bao, C. Soci, Y. Ding, Z. L. Wang, and D. Wang, "Direct Heteroepitaxy ofVertical InAs Nanowires on Si Substrates for Broad Band Photovoltaics and Photodetection," Nano Lett., vol. 9, pp. 2926-2934, Aug. 2009.
47. J. A. Czaban, D. A. Thompson, and R. R. LaPierre, "GaAs core-shell nanowires for photovoltaic applications," Nano Lett., vol. 9, pp. 148-154, Jan. 2009.
48. L. Tsakalakos, J.Balch, J. Fronheiser,B.Korevaar,O. Sulima, and J.Rand, "Silicon nanowire solar cells," Appl. Phys. Lett., vol. 91, pp. 233117-1-233117-3, Dec. 3, 2007.
49. V. Consonni, M. Knelangen, U. Jahn, A. Trampert, L. Geelhaar, and H. Riechert, "Effects of nanowire coalescence on their structural and optical properties on a local scale," Appl. Phys. Lett., vol. 95, pp. 241910-1-241910-3, Dec. 14, 2009.