High-frequency switching of SiC high-voltage LJFET

IEEE Transactions on Power Electronics

Volumn 24, Issue 1, 2009, Pages 271-277

  Sheng, Kuang ^a   Zhang, Yongxi ^a   Yu, Liangchum ^a   Su, Ming ^a   Zhao, Jian H ^a  

^a RUTGERS UNIVERSITY   (United States)

Author keywords

High frequency; JFET; Power ICs; Silicon carbide (SiC)

Indexed keywords

AUTOMOBILE DRIVERS; MONOLITHIC INTEGRATED CIRCUITS; SWITCHING;

DEVICE TEMPERATURES; FAST SWITCHING; GATE DRIVERS; HIGH FREQUENCY; HIGH VOLTAGES; HIGH-FREQUENCY SWITCHING; HIGH-TEMPERATURE APPLICATIONS; JFET; LOAD SWITCHING; MONOLITHICALLY INTEGRATED; NEGATIVE POWER SUPPLIES; POWER ICS; SILICON DEVICES; SWITCHING SPEED; SWITCHING TIME; VOLTAGE RATINGS;

SILICON CARBIDE;

EID: 61649087702     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2008.2005984     Document Type: Article

References (11)

1. A. Elford and P. Mawby, "Emerging silicon carbide power device technologies," J. Wide Bandgap Mater., vol. 7, no. 3, pp. 179-191, 2000.
2. J. A. Cooper, Jr., M. R. Melloch, R. Singh, A. Agarwal, and J. W. Palmour, "Status and prospects for SiC power MOSFETs," IEEE Trans. Electron Devices, vol. 49, no. 4, pp. 658-664, Apr. 2002.
3. J. Spitz, M. R. Melloch, J. A. Cooper, Jr., and M. A. Capano, "2.6 kV 4H-SiC lateral DMOSFETs," IEEE Electron Device Lett., vol. 19, no. 4, pp. 100-102, Apr. 1998.
4. S. Banerjee, K. Chatty, T. P. Chow, and R. J. Gutmann, "Improved high-voltage lateral RESURF MOSFETs in 4H-SiC," IEEE Electron Device Lett., vol. 22, no. 5, pp. 209-211, May 2001.
5. 2 4H-SiC(0001) RESURF MOSFET," IEEE Electron Device Lett., vol. 26, no. 9, pp. 649-651, Sep. 2005.
6. 2 normally-off 4H-SiC lateral JFET," IEEE Electron Device Lett., vol. 27, no. 10, pp. 834-836, Oct. 2006.
7. 2 normally-off 4H-SiC lateral RESURF JFET for power integrated circuits application," IEEE Electron Device Lett. vol. 28, no. 5, pp. 404-407, May 2007.
8. J. H. Zhao, Y. Zhang, M. Su, K. Sheng, P. Alexandrov, and L. Fursin, "Demonstration of the first power IC on 4H-SiC," in Proc. Int. Semiconduct. Device Res. Symp., 2007, pp. 1-2.
9. K. Sheng and S. Hu, "Design criteria of high-voltage lateral RESURF JFETs on 4H-SiC," IEEE Trans. Electron Devices, vol. 52, no. 10, pp. 2300-2308, Oct. 2005.
10. T. Funaki, J. C. Balda, J. Junghans, A. S. Kashyap, H. A. Mantooth, F. Barlow, T. Kimoto, and T. Hikihara, "Power conversion with SiC devices at extremely high ambient temperatures," IEEE Trans. Power Electron. vol. 22, no. 4, pp. 1321-1329, Jul. 2007.
11. J. Yin, Z. Liang, and J. D. van Wyk, "High temperature embedded SiC chip module (ECM) for power electronics applications," IEEE Trans. Power Electron., vol. 22, no. 2, pp. 329-398, Mar. 2007.