Evaluation of free carrier lifetime and deep levels of the thick 4H-SiC epilayers

Materials Science Forum

Volumn 457-460, Issue I, 2004, Pages 565-568

  Tawara, T ^a,b   Tsuchida, H ^a   Izumi, S ^a,b   Kamata, I ^a   Izumi, K ^a  

^a CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY   (Japan)

^b FUJI ELECTRIC CO   (Japan)

Author keywords

Carrier Lifetime; Deep Level; Time Resolved Photoluminescence

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DEEP LEVEL TRANSIENT SPECTROSCOPY; DOPING (ADDITIVES); ELECTRIC POTENTIAL; HOLE TRAPS; IRON; PARAMETER ESTIMATION; PHOTOCONDUCTIVITY; PHOTOLUMINESCENCE; PHOTONS; SECONDARY ION MASS SPECTROMETRY; SILICON CARBIDE;

CARRIER LIFETIME; DEEP-LEVEL; TIME-RESOLVED PHOTOLUMINESCENCE; VOLTAGE DROP;

HYDROGEN;

EID: 4644282156     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.565     Document Type: Conference Paper

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