Physical modeling of fast p-i-n diodes with carrier lifetime zoning, Part I: Device model

IEEE Transactions on Power Electronics

Volumn 23, Issue 1, 2008, Pages 189-197

  Bryant, Angus T ^a   Lu, Liqing ^b   Santi, Enrico ^b   Palmer, Patrick R ^c   Hudgins, Jerry L ^d  

^a UNIVERSITY OF WARWICK   (United Kingdom)

^b University of South Carolina   (United States)

^c UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^d UNIVERSITY OF NEBRASKA LINCOLN   (United States)

Author keywords

Lifetime control; P i n diode model; Physics based model; Power semiconductor modeling; Variable lifetime

Indexed keywords

CARRIER CONCENTRATION; CARRIER LIFETIME; FINITE ELEMENT METHOD; FOURIER SERIES; SEMICONDUCTOR DEVICE MODELS;

LIFETIME CONTROL; P-I-N DIODE MODEL; POWER SEMICONDUCTOR MODELING; VARIABLE LIFETIME;

SEMICONDUCTOR DIODES;

EID: 38349009183     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2007.911823     Document Type: Article

References (34)

1. N. Shammas, M. Rahimo, and P. Hoban, "Effects of temperature, forward current and commutating di/dt on the reverse recovery behaviour of fast power diodes," in Proc. EPE Conf. Rec., Seville, Spain, 1995, vol. 1, pp. 577-582.
2. E. Napoli, A. Strollo, and P. Spirito, "Numerical analysis of local life-time control for high-speed low-loss P-i-N diode design," IEEE Trans. Power Electron., vol. 14, no. 4, pp. 615-621, Jul. 1999.
3. E. Napoli, A. Strollo, and P. Spirito, "Fast power rectifier design using local lifetime and emitter efficiency control techniques," Microelectron. J., vol. 39, pp. 505-512, 1999.
4. M. Rahimo and N. Shammas, "Optimisation of the reverse recovery behaviour of fast power diodes using injection efficiency and lifetime control techniques," in Proc. EPE Conf. Rec., Trondheim, Norway, 1997, vol. 2, pp. 99-104.
5. B. Baliga and E. Sun, "Comparison of gold, platinum, and electron irradiation for controlling lifetime in power rectifiers," IEEE Trans. Electron Devices, vol. ED-24, no. 6, pp. 685-688, Jun. 1977.
6. C. Ma and P. Lauritzen, "A simple power diode model with forward and reverse recovery," IEEE Trans. Power Electron., vol. 8, no. 4, pp. 342-346, Oct. 1993.
7. P. Persson, "A circuit simulation model for the high power diode," in Proc. EPE Conf. Rec., Florence, Italy, 1991, vol. 2, pp. 458-463.
8. D. Metzner, T. Vogler, and D. Schröder, "A modular concept for the circuit simulation of bipolar power semiconductors," in Proc. EPE Conf. Rec., Brighton, U.K., 1993, vol. 2, pp. 15-22.
9. Y. Bai and A. Huang, "A physics-based high voltage diode model for circuit simulation," in Proc. CPES Seminar Conf. Rec., Blacksburg, VA, Sep. 1999, D-27.
10. G. Buiatti, F. Cappelluti, and G. Ghione, "Finite difference based power diodes simulation within SPICE: Modeling approach and validation," in Proc. PESC Conf. Rec., Recife, Brazil, Jun. 2005, pp. 999-1003.
11. H. Morel, S. Gamal, and J. Chante, "State variable modeling of the power PIN diode using an explicit approximation of semiconductor device equations: A novel approach," IEEE Trans. Power Electron., vol. 9, no. 1, pp. 112-120, Jan. 1994.
12. P. Leturcq, M. Berraies, and J.-L. Massol, "Implementation and validation of a new diode model for circuit simulation," in Proc. PESC Conf. Rec., Baveno, Italy, 1996, pp. 35-43.
13. A. Strollo, "A new SPICE model of power P-I-N diode based on asymptotic waveform evaluation," IEEE Trans. Power Electron., vol. 12, no. 1, pp. 12-20, Jan. 1997.
14. P. Igic, P. Mawby, M. Towers, and S. Batcup, "New physically based PiN diode compact model for circuit modelling applications," Ints. Electron. Eng.Proc. - Circuits Devices Syst., vol. 149, no. 4, pp. 257-263, Aug. 2002.
15. X. Yuan, F. Udrea, L. Coulbeck, P. Waind, and G. Amaratunga, "On-state analytical modeling of IGBTs with local lifetime control," IEEE Trans. Power Electron., vol. 17, no. 5, pp. 815-823, Sep. 2002.
16. P. Palmer, E. Santi, J. Hudgins, X. Kang, J. Joyce, and P. Eng, "Circuit simulator models for the diode and IGBT with full temperature dependent features," IEEE Trans. Power Electron., vol. 18, no. 5, pp. 1220-1229, Sep. 2003.
17. L. Lu, A. Bryant, E. Santi, P. Palmer, and J. Hudgins, "Physical modelling of fast p-i-n diodes with carrier lifetime zoning, Part II: Parameter extraction," IEEE Trans. Power Electron., vol. 23, no. 1, Jan. 2008,.
18. M. Rahimo, D. Chamund, and N. Shammas, "Analysis of the IGBT/ freewheeling diode switching behaviour during turn-on in hard switching applications," in Proc. Power Electron. Variable Speed Drives Conf. Rec., Sep. 1998, pp. 381-386.
19. O. Humbel, N. Galster, F. Bauer, and W. Fichtner, "4.5 kv fast diodes with expanded SOA using a multi-energy proton lifetime control technique," in Proc. ISPSD Conf. Rec., Toronto, QC, Canada, 1999, pp. 121-124.
20. M. Rahimo and S. Jones, "C-class ultra fast recovery diodes for high speed switching applications," in Proc. PCIM Conf. Rec., Nurnberg, Germany, 2000.
21. P. Leturcq, M. Berraies, J.-L. Debrie, P. Gillet, M. Kallala, and J.-L. Massol, "Bipolar semiconductor device models for computer-aided design in power electronics," in Proc. EPE Conf. Rec., Seville, Spain, 1995, pp. 222-227.
22. J. Lutz, "Fast recovery diodes - Reverse recovery behaviour and dynamic avalanche," in Proc. MIEL Conf. Rec., Nis, Serbia, May 2004, pp. 11-16.
23. M. Domeij, J. Lutz, and D. Silber, "On the destruction limit of Si power diodes during reverse recovery with dynamic avalanche," IEEE Trans. Electron Devices, vol. 50, no. 2, pp. 486-493, Feb. 2003.
24. L. Gölder and J. Sigg, "Analytical model for dynamic avalanche breakdown in power devices," in Proc. EPE Conf. Rec., Trondheim, Norway, 1997, vol. 4, pp. 129-133.
25. H. Benda and E. Spenke, "Reverse recovery processes in silicon power rectifiers," Proc. IEEE, vol. 55, no. 8, pp. 1331-1354, Aug. 1967.
26. + (epitaxi al) diodes," IEEE Trans. Electron Devices, vol. ED-16, no. 5, pp. 458-467, May 1969.
27. D. Caughey and R. Thomas, "Carrier mobilities in silicon empirically related to doping and field," Proc. IEEE, vol. 55, no. 12, pp. 2192-2193, Dec. 1967.
28. H. Schlangenotto and W. Gerlach, "On the effective carrier lifetime in p-s-n rectifiers at high injection levels," Solid-State Electron. vol. 12, pp. 267-275, 1969.
29. B. Baliga, Modern Power Devices. New York: Wiley, 1987.
30. Z. Wang, A. Bryant, J. Wu, and P. Palmer, "Implementation and comparison of power diode models for system simulation," in Proc. PEDS Conf. Rec., Kuala Lumpur, Nov. 2005, pp. 694-699.
31. A. Oppenheim and R. Schafer, Digital Signal Processing. London, U.K.: Prentice-Hall, 1975.
32. J. Mäkinen, R. Piché, and A. Ellman, "Fluid transmission line modeling using a variational method," J. Dynam. Syst., vol. 122, pp. 153-162, Mar. 2000.
33. P. Palmer, A. Bryant, J. Hudgins, and E. Santi, "Simulation and optimisation of diode and IGBT interaction in a chopper cell using MATLAB and simulink," in Proc. IAS Conf. Rec., Pittsburgh, PA, Oct. 2002, pp. 2437-2444.
34. A. Bryant, P. Mawby, P. Palmer, E. Santi, and J. Hudgins, "Exploration of power device reliability using compact thermal models and fast electro-thermal simulation," in Proc. IAS Conf. Rec., Tampa, FL, Oct. 2006, pp. 1465-1472.