Physical modeling of fast p-i-n diodes with carrier lifetime zoning, Part I: Device model

IEEE Transactions on Power Electronics

Volumn 23, Issue 1, 2008, Pages 189-197

  Bryant, Angus T ^a   Lu, Liqing ^b   Santi, Enrico ^b   Palmer, Patrick R ^c   Hudgins, Jerry L ^d  

^a UNIVERSITY OF WARWICK   (United Kingdom)

^b The Department of Mechanical Engineering   (United States)

^c UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^d UNIVERSITY OF NEBRASKA LINCOLN   (United States)

Author keywords

Lifetime control; P i n diode model; Physics based model; Power semiconductor modeling; Variable lifetime

Indexed keywords

CARRIER CONCENTRATION; CARRIER LIFETIME; FINITE ELEMENT METHOD; FOURIER SERIES; SEMICONDUCTOR DEVICE MODELS;

LIFETIME CONTROL; P-I-N DIODE MODEL; POWER SEMICONDUCTOR MODELING; VARIABLE LIFETIME;

SEMICONDUCTOR DIODES;

EID: 38349009183     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2007.911823     Document Type: Article

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