A self-consistent model of the OCVD behavior of Si and 4H-SiC p +-n-n + diodes

IEEE Transactions on Electron Devices

Volumn 56, Issue 12, 2009, Pages 2902-2910

  Bellone, Salvatore ^a   Albanese, Loredana Freda ^a   Licciardo, Gian Domenico ^a  

^a UNIVERSITY OF SALERNO   (Italy)

Author keywords

Carrier lifetime; Diode; Open circuit voltage decay (OCVD); Polytype 4H of silicon carbide (4H SiC); Transient

Indexed keywords

I - V CURVE; JUNCTION PROPERTIES; NON-LINEAR DECAY; OCVD METHOD; PHYSICAL PARAMETERS; POLYTYPES; SELF-CONSISTENT MODEL; SPATIAL TEMPORALS; STEADY-STATE CONDITION; VOLTAGE TRANSIENTS;

CARRIER LIFETIME; COMPUTER SIMULATION; EPILAYERS; OPEN CIRCUIT VOLTAGE; POWER QUALITY; SILICON CARBIDE; TRANSIENTS;

DIODES;

EID: 84859900269     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2032743     Document Type: Article

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