Surface-passivation effects on the performance of 4H-SiC BJTs

IEEE Transactions on Electron Devices

Volumn 58, Issue 1, 2011, Pages 259-265

  Ghandi, Reza ^a   Buono, Benedetto ^a   Domeij, Martin ^a   Esteve, Romain ^b   Schöner, Adolf ^b   Han, Jisheng ^c   Dimitrijev, Sima ^c   Reshanov, Sergey A ^b   Zetterling, Carl Mikael ^a   Östling, Mikael ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b ACREO AB   (Sweden)

^c GRIFFITH UNIVERSITY   (Australia)

Author keywords

Bipolar junction transistors (BJTs); power transistor; silicon carbide

Indexed keywords

BIPOLAR JUNCTION TRANSISTOR; BREAKDOWN VOLTAGE; CURRENT GAINS; DEVICE SIMULATIONS; ELECTRICAL PERFORMANCE; HIGH-VOLTAGES; INTERFACE TRAPS; OXIDE CHARGE; PASSIVATION EFFECT; PASSIVATION LAYER; POWER TRANSISTOR; SURFACE PASSIVATION;

ELECTRIC BREAKDOWN; MOS CAPACITORS; PASSIVATION; POWER ELECTRONICS; SILICON CARBIDE; SILICON OXIDES; SILICON WAFERS; TUNNEL DIODES;

BIPOLAR TRANSISTORS;

EID: 78650871047     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2082712     Document Type: Article

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