Experimental characterization and numerical analysis of the 4H-SiC p-i-n diodes static and transient behaviour

Microelectronics Journal

Volumn 39, Issue 12, 2008, Pages 1594-1599

  Pezzimenti, Fortunato ^a   Della Corte, Francesco G ^a   Nipoti, Roberta ^b  

^a UNIVERSITY MEDITERRANEA OF REGGIO CALABRIA   (Italy)

^b CNR Consiglio Nazionale delle Ricerche   (Italy)

Author keywords

4H SiC p i n diode; Carrier lifetime; Fast switching; High temperature; J V characteristic; Silicon carbide

Indexed keywords

CARRIER LIFETIME; CHARGE CARRIERS; CIVIL AVIATION; DIODES; HIGH TEMPERATURE APPLICATIONS; NUMERICAL ANALYSIS; SILICON; SILICON CARBIDE; TRANSIENT ANALYSIS;

4H-SIC P-I-N DIODE; CHARGE CARRIER LIFETIMES; CIRCULAR STRUCTURES; CURRENT INJECTIONS; DEPTH PROFILES; EXPERIMENTAL CHARACTERIZATIONS; EXPERIMENTAL DATUMS; FAST SWITCHING; FORWARD CURRENTS; HIGH POWERS; HIGH TEMPERATURE; HIGH TEMPERATURES; IDEALITY FACTORS; IMPLANTED DEVICES; J-V CHARACTERISTIC; JUNCTION DEPTHS; NUMERICAL SIMULATIONS; RECOVERY TIMES; ROOM TEMPERATURES; SERIES RESISTANCES; SIMULATED RESULTS; SWITCHING CHARACTERISTICS; SWITCHING PERFORMANCES; TEMPERATURE RANGES; TEST CONDITIONS; TURN OFFS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 56049093058     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2008.02.005     Document Type: Article

References (24)

1. Berger L.I. Semiconductor Materials (1997), CRC Press, New York
2. Harris G.L. Properties of SiC (1995), Institute of Electrical Engineers, London
3. Cooper J.A., and Agarwal A. SiC power-switching devices--the second electronics revolution?. Proc. IEEE 90 (2002) 956-968
4. Wang J., and Williams B.W. Evaluation of high-voltage 4H-SiC switching devices. IEEE Trans. Electron. Devices 46 (1999) 589-597
5. Elford A., and Mawby P.A. The numerical modelling of silicon carbide high power semiconductor devices. Microelectron. J. 30 (1999) 527-534
6. Weitzel C.E., Palmour J.W., Carter Jr. C.H., Moore K., Nordquist K.J., Allen S., et al. Silicon carbide high-power devices. IEEE Trans. Electron. Devices 43 (1996) 1732-1740
7. Choyke W.J., Matsunami H., and Pensl G. Silicon Carbide-Recent Major Advances (2003), Springer, Berlin
8. Powell A.R., and Rowland L.B. SiC materials-progress, status and potential roadblocks. Proc. IEEE 90 (2002) 942-955
9. Badila M., Brezeanu G., Dilimot G., Millan J., Godignon P., Chante J.P., et al. An improved technology of 6H-SiC power diodes. Microelectron. J. 31 (2000) 955-962
10. Feng Z.C., and Zhao J.H. Silicon Carbide: Materials, Processing and Devices (2004), Taylor & Francis, New York
11. Godignon P., Morvan E., Jordà X., Vellvehi M., Flores D., and Rebollo J. SiC power DIMOS with double implanted Al/B P-well. Microelectron. J. 32 (2001) 503-507
12. Lades M., Kaindl W., Kaminski N., Niemann E., and Wachutka G. Dynamics of incomplete ionized dopants and their impact on 4H/6H-SiC devices. IEEE Trans. Electron. Devices 46 (1999) 598-604
13. Rao M.V. Maturing ion-implantation technology and its device applications in SiC. Solid State Electron. 47 (2003) 213-222
14. Capano M.A., Ryu S., Cooper Jr. J.A., Melloch M.R., Rottner K., Karlsson S., et al. Surface roughening in ion implanted 4H-silicon carbide. J. Electron. Mater. 28 (1999) 214-218
15. Silvaco International. ATLAS User Manual (2006), Santa Clara, CA
16. Della Corte F.G., Pezzimenti F., and Nipoti R. Simulation and experimental results on the forward J-V characteristic of Al implanted 4H-SiC p-i-n diodes. Microelectron. J. 38 (2007) 1273-1279
17. Poggi A., Bergamini F., Nipoti R., Solmi S., and Carnera A. Effects of heating ramp rates on the characteristics of Al implanted 4H-SiC junctions. Appl. Phys. Lett. 88 (2006) 162106-162109
18. Sze S.M. Physics of Semiconductor Devices (1981), Wiley-Interscience, New York (Chapter 2)
19. Singh R., Cooper J.A., Melloch M.R., Chow T.P., and Palmour J.W. SiC power Schottky and pin diodes. IEEE Trans. Electron Devices 49 (2002) 665-672
20. Baliga B.J. Power Semiconductor Devices (1996), MA-PWS, Boston
21. General Semiconductor 1N4148 datasheet.
22. Ayalew T., Grasser T., Kosinam H., and Selberherr S. Modeling of lattice site-dependent incomplete ionozation in α-SiC devices. Mater. Sci. Forum 483 (2005) 845-848
23. Levinshtein M.E., Mnatsakanov T., Ivanov P., Palmour J.W., Rumyantsev S.L., Singh R., et al. "Paradoxes" of carrier lifetime measurements in high-voltage SiC diodes. IEEE Trans. Electron. Devices 48 (2001) 1703-1710
24. Galeckas A., Linnros J., Grivickas V., Lindefelf U., and Hallin C. Auger recombination in 4H-SiC: unusual temperature behaviour. Appl. Phys. Lett. 71 (1997) 3269-3271