4H-SiC PiN diode electrothermal model for conduction and reverse breakdown for Pspice simulator

International Power Electronics Congress - CIEP

Volumn , Issue , 2008, Pages 192-197

  Hernandez, L ^a,b   Claudio Sanchez A ^a   Cotorogea, M ^a   Aguayo, J ^a   Rodriguez M A ^a,c  

^a CENTRO NACIONAL DE INVESTIGACIÓN Y DESARROLLO TECNOLÓGICO   (Mexico)

^b INSTITUTO POLITÉCNICO NACIONAL   (Mexico)

^c UNIVERSIDAD AUTÓNOMA DEL CARMEN   (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

DIODES; ELECTRIC CONDUCTIVITY; ELECTRIC EQUIPMENT; HEAT CONDUCTION; IONIZATION OF GASES; POWER ELECTRONICS; SEMICONDUCTOR DIODES; SILICON; SILICON CARBIDE; SPICE;

ANALYTICAL EXPRESSIONS; BREAK DOWN VOLTAGES; CONVERGENCE PROBLEMS; ELECTROTHERMAL MODELS; PHYSICAL MODELS; PIN DIODES; POWER DEVICES; PSPICE SIMULATORS; REVERSE BREAKDOWNS; SILICON CARBIDE POWERS; SIMULATION RESULTS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 56649105370     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CIEP.2008.4653842     Document Type: Conference Paper

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